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The SIR802DP-T1-GE3 is MOSFET N-CH 20V 30A PPAK SO-8, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SIR802DP-GE3, that offers Unit Weight features such as 0.017870 oz, Mounting Style is designed to work in SMD/SMT, as well as the PowerPAKR SO-8 Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is PowerPAKR SO-8, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 27.7W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 1785pF @ 10V, and FET Feature is Standard, and the Current Continuous Drain Id 25°C is 30A (Tc), and Rds On Max Id Vgs is 5 mOhm @ 10A, 10V, and the Vgs th Max Id is 1.5V @ 250μA, and Gate Charge Qg Vgs is 32nC @ 10V, and the Pd Power Dissipation is 27.7 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Vgs Gate Source Voltage is 12 V, and the Id Continuous Drain Current is 30 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Rds On Drain Source Resistance is 5 mOhms, and Transistor Polarity is N-Channel.
The SIR800DP-T1-GE3 is MOSFET N-CH 20V 50A PPAK SO-8, that includes 0.6 V to 1.5 V Vgs th Gate Source Threshold Voltage, they are designed to operate with a +/- 12 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 20 V, that offers Unit Weight features such as 0.017870 oz, Transistor Type is designed to work in 1 N-Channel, as well as the N-Channel Transistor Polarity, the device can also be used as Si Technology. In addition, the Series is SIRxxxDP, the device is offered in 1.9 mOhms Rds On Drain Source Resistance, the device has a 89 nC of Qg Gate Charge, and Pd Power Dissipation is 69 W, and the Part Aliases is SIR800DP-GE3, and Packaging is Reel, and the Package Case is SO-8, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 50 A, and the Forward Transconductance Min is 96 S, and Configuration is Single.
The SiR774DP-T1-GE3 is MOSFET 30 Volts 40 Amps 62.5 Watts, that includes Single with Schottky Diode Configuration, they are designed to operate with a 10 ns Fall Time, Forward Transconductance Min is shown on datasheet note for use in a 95 s, that offers Id Continuous Drain Current features such as 40 A, Mounting Style is designed to work in SMD/SMT, as well as the 1 Channel Number of Channels, the device can also be used as SO-8 Package Case. In addition, the Packaging is Reel, the device is offered in SIR774DP-GE3 Part Aliases, the device has a 62.5 W of Pd Power Dissipation, and Qg Gate Charge is 58 nC, and the Rds On Drain Source Resistance is 2.1 mOhms, and Rise Time is 10 ns, and the Series is SIRxxxDP, and Technology is Si, and the Transistor Polarity is N-Channel, and Transistor Type is 1 N-Channel, and the Typical Turn Off Delay Time is 33 ns, and Typical Turn On Delay Time is 12 ns, and the Unit Weight is 0.017870 oz, and Vds Drain Source Breakdown Voltage is 30 V, and the Vgs Gate Source Voltage is 20 V.
SiR802DP-T1-E3 with EDA / CAD Models manufactured by VISHAY. The SiR802DP-T1-E3 is available in QFN8 Package, is part of the IC Chips.