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The SI4436DY-T1-GE3 is MOSFET N-CH 60V 8A 8-SOIC, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI4436DY-GE3, that offers Unit Weight features such as 0.006596 oz, Mounting Style is designed to work in SMD/SMT, as well as the 8-SOIC (0.154", 3.90mm Width) Package Case, the device can also be used as Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device is offered in Surface Mount Mounting Type, the device has a 1 Channel of Number of Channels, and Supplier Device Package is 8-SO, and the Configuration is Single, and FET Type is MOSFET N-Channel, Metal Oxide, and the Power Max is 5W, and Transistor Type is 1 N-Channel, and the Drain to Source Voltage Vdss is 60V, and Input Capacitance Ciss Vds is 1100pF @ 30V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 8A (Tc), and the Rds On Max Id Vgs is 36 mOhm @ 4.6A, 10V, and Vgs th Max Id is 2.5V @ 250μA, and the Gate Charge Qg Vgs is 32nC @ 10V, and Pd Power Dissipation is 2.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 60 ns 10 ns, and Rise Time is 150 ns 15 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 6.1 A, and the Vds Drain Source Breakdown Voltage is 60 V, and Rds On Drain Source Resistance is 36 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 20 ns 25 ns, and the Typical Turn On Delay Time is 20 ns 10 ns, and Channel Mode is Enhancement.
The SI4436DY-T1-E3 is MOSFET N-CH 60V 8A 8-SOIC, that includes 2.5V @ 250μA Vgs th Max Id, they are designed to operate with a 20 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 60 V, that offers Unit Weight features such as 0.006596 oz, Typical Turn On Delay Time is designed to work in 20 ns 10 ns, as well as the 20 ns 25 ns Typical Turn Off Delay Time, the device can also be used as 1 N-Channel Transistor Type. In addition, the Transistor Polarity is N-Channel, the device is offered in Si Technology, the device has a 8-SO of Supplier Device Package, and Series is TrenchFETR, and the Rise Time is 150 ns 15 ns, and Rds On Max Id Vgs is 36 mOhm @ 4.6A, 10V, and the Rds On Drain Source Resistance is 36 mOhms, and Power Max is 5W, and the Pd Power Dissipation is 2.5 W, and Part Aliases is SI4436DY-E3, and the Packaging is Digi-ReelR Alternate Packaging, and Package Case is 8-SOIC (0.154", 3.90mm Width), it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, and Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Input Capacitance Ciss Vds is 1100pF @ 30V, and Id Continuous Drain Current is 6.1 A, and the Gate Charge Qg Vgs is 32nC @ 10V, and FET Type is MOSFET N-Channel, Metal Oxide, and the FET Feature is Standard, and Fall Time is 60 ns 10 ns, and the Drain to Source Voltage Vdss is 60V, and Current Continuous Drain Id 25°C is 8A (Tc), and the Configuration is Single, and Channel Mode is Enhancement.
SI4436DY-T1 with circuit diagram manufactured by VISHAY. The SI4436DY-T1 is available in SOP8 Package, is part of the IC Chips.
SI4436DY-T1-E3. with EDA / CAD Models manufactured by VISHAY. The SI4436DY-T1-E3. is available in SOP-8 Package, is part of the IC Chips.