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The SI4848DY-T1-E3 is MOSFET N-CH 150V 2.7A 8-SOIC, that includes TrenchFETR Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Part Aliases is shown on datasheet note for use in a SI4848DY-E3, that offers Unit Weight features such as 0.017870 oz, Mounting Style is designed to work in SMD/SMT, as well as the TrenchFET Tradename, the device can also be used as 8-SOIC (0.154", 3.90mm Width) Package Case. In addition, the Technology is Si, it has an Operating Temperature range of -55°C ~ 150°C (TJ), the device has a Surface Mount of Mounting Type, and Number of Channels is 1 Channel, and the Supplier Device Package is 8-SO, and Configuration is Single, and the FET Type is MOSFET N-Channel, Metal Oxide, and Power Max is 1.5W, and the Transistor Type is 1 N-Channel, and Drain to Source Voltage Vdss is 150V, and the FET Feature is Standard, and Current Continuous Drain Id 25°C is 2.7A (Ta), and the Rds On Max Id Vgs is 85 mOhm @ 3.5A, 10V, and Vgs th Max Id is 2V @ 250μA (Min), and the Gate Charge Qg Vgs is 21nC @ 10V, and Pd Power Dissipation is 1.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Fall Time is 10 ns, and Rise Time is 10 ns, and the Vgs Gate Source Voltage is 20 V, and Id Continuous Drain Current is 3.7 A, and the Vds Drain Source Breakdown Voltage is 150 V, and Rds On Drain Source Resistance is 85 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 24 ns, and the Typical Turn On Delay Time is 9 ns, and Qg Gate Charge is 15 nC, and the Channel Mode is Enhancement.
The SI4848DY-T1-GE3 is MOSFET N-CH 150V 2.7A 8-SOIC, that includes 20 V Vgs Gate Source Voltage, they are designed to operate with a 150 V Vds Drain Source Breakdown Voltage, Unit Weight is shown on datasheet note for use in a 0.017870 oz, that offers Transistor Type features such as 1 N-Channel, Transistor Polarity is designed to work in N-Channel, as well as the Si Technology, the device can also be used as 85 mOhms Rds On Drain Source Resistance. In addition, the Qg Gate Charge is 15 nC, the device is offered in 1.5 W Pd Power Dissipation, the device has a SI4848DY-GE3 of Part Aliases, and Packaging is Reel, and the Package Case is SO-8, and Number of Channels is 1 Channel, and the Mounting Style is SMD/SMT, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and Id Continuous Drain Current is 3.7 A, and the Configuration is Single.
SI4850 with circuit diagram manufactured by VISHAY. The SI4850 is available in SOP8 Package, is part of the FETs - Single.