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TH58BYG2S3HBAI6 with pin details, that includes Benand? Series, they are designed to operate with a Tray Packaging, Package Case is shown on datasheet note for use in a 67-VFBGA, it has an Operating Temperature range of -40°C ~ 85°C (TA), Interface is designed to work in Parallel, as well as the 1.7 V ~ 1.95 V Voltage Supply, the device can also be used as 67-VFBGA (6.5x8) Supplier Device Package. In addition, the Memory Size is 4G (512M x 8), the device is offered in EEPROM - NAND Memory Type, the device has a 25ns of Speed, and Format Memory is EEPROMs - Serial.
The TH58BYG3S0HBAI6 is Flash Memory 8 GBIT CMOS NAND EEPROM manufactured by Toshiba. The TH58BYG3S0HBAI6 is available in BGA67 Package, is part of the Memory, , and with support for Flash Memory 8 GBIT CMOS NAND EEPROM, NAND Flash Parallel 1.8V 8G-bit 1G x 8.
TH58DVG4S0ETAK0 with circuit diagram manufactured by TOSHIBA. The TH58DVG4S0ETAK0 is available in TSSOP Package, is part of the IC Chips.
TH58DVG5S0ETA2 with EDA / CAD Models manufactured by Toshiba. is part of the Memory, , and with support for Flash Memory 32Gb IC Flash NAND EEPROM, 32GB SLC NAND TSOP 43NM SB (EE.