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Home  Transistors - FETs, MOSFETs - RF  2SK3075(TE12L,Q) Datasheets | Transistors - FETs, MOSFETs - RF RF Mosfet N-Channel 9.6V 50mA 520MHz 11.7dB 7.5W PW-X

Mar 2 2021

2SK3075(TE12L,Q) Datasheets | Transistors - FETs, MOSFETs - RF RF Mosfet N-Channel 9.6V 50mA 520MHz 11.7dB 7.5W PW-X

Product Overview

Image:
2SK3075-TE12L-Q
Manufacturer Part#: 2SK3075(TE12L,Q)
Product Category: Transistors - FETs, MOSFETs - RF
Stock: No
Manufacturer: Toshiba Semiconductor and Storage
Description: RF Mosfet N-Channel 9.6V 50mA 520MHz 11.7dB 7.5W PW-X
Datasheet: 2SK3075
Package: TO-271AA
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

CAD Models

Product Attributes

Series: -
Part Status: Discontinued at Digi-Key
Transistor Type: N-Channel
Frequency: 520MHz
Gain: 11.7dB
Voltage - Test: 9.6V
Current Rating (Amps): 5A
Noise Figure: -
Current - Test: 50mA
Power - Output: 7.5W
Voltage - Rated: 30V
Package / Case: TO-271AA
Supplier Device Package: PW-X
Mfr: Toshiba Semiconductor and Storage
Package: Cut Tape (CT)Digi-Reel®
Base Product Number: TLP732

Descriptions

There is no relevant information available for this part yet.

FEATURES

FIELD EFFECT TRANSISTOR SILICON N CHANNELMOS TYPE

RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER

(Note)The TOSHIBA products listed inthis document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

Output Power : PO ≥7.5W

Power Gain : GP ≥11.7dB
Drain Efficiency : ηD ≥50%

Environmental & Export Classifications

Description Value
RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.29.0095

Documents & Media

Datasheets: 2SK3075

Popularity by Region

  • 1. Luxembourg
    100
  • 2. Australia
    98
  • 3. Japan
    97
  • 4. Slovakia
    97
  • 5. South Africa
    95
  • 6. United States
    92
  • 7. Malaysia
    92
  • 8. Faroe Islands
    91
  • 9. Brazil
    90
  • 10. Poland
    90
  • 11. Dominican Republic
    89
  • 12. Israel
    89
  • 13. Singapore
    89
  • 14. India
    89
  • 15. Taiwan
    89
  • 16. Switzerland
    89
  • 17. France
    89
  • 18. Sweden
    89
  • 19. China
    89
  • 20. Italy
    88
  • 21. Andorra
    88
  • 22. Argentina
    87
  • 23. Ukraine
    86
  • 24. United Kingdom
    86
  • 25. Thailand
    86
  • 26. Canada
    86
  • 27. Russia
    86
  • 28. Germany
    84
  • 29. Hong Kong
    82
  • 30. South Korea
    81
  • 31. Chile
    78
  • 32. Lithuania
    77
  • 33. Saudi Arabia
    77
  • 34. New Zealand
    73
  • 35. Hungary
    72

2SK3075(TE12L,Q) Popularity by Region

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You can also find the tracking number in order history.
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Parts should be unused and in original packaging.
Customer has to take charge for the shipping.
Warranty All Apogeeweb purchases come with a 90-day Apogeeweb warranty against any manufacturing defects.
If the customer complains the product is "renovation/fake/having quality problem", and ask for a change or refund, the related procedures can be carried out only after an effective test report from a authoritative third party was provided.
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2SK3075-TE12L-Q
RF Mosfet N-Channel 9.6V 50mA 520MHz 11.7dB 7.5W PW-X
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Discontinued at Digi-Key
Transistor Type: N-Channel
Frequency: 520MHz
Gain: 11.7dB
Voltage - Test: 9.6V
Current Rating (Amps): 5A
Noise Figure: -
Current - Test: 50mA
Power - Output: 7.5W
Voltage - Rated: 30V
Package / Case: TO-271AA
Supplier Device Package: PW-X
Mfr: Toshiba Semiconductor and Storage
Package: Cut Tape (CT)Digi-Reel®
Base Product Number: TLP732

There is no relevant information available for this part yet.

FEATURES

FIELD EFFECT TRANSISTOR SILICON N CHANNELMOS TYPE

RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER

(Note)The TOSHIBA products listed inthis document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

Output Power : PO ≥7.5W

Power Gain : GP ≥11.7dB
Drain Efficiency : ηD ≥50%

There is no relevant information available for this part yet.