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Home  Transistors - FETs, MOSFETs - RF  2SK3074TE12LF Datasheets | Transistors - FETs, MOSFETs - RF RF Mosfet N-Channel 9.6V 50mA 520MHz 14.9dB 630mW SC-62

Mar 2 2021

2SK3074TE12LF Datasheets | Transistors - FETs, MOSFETs - RF RF Mosfet N-Channel 9.6V 50mA 520MHz 14.9dB 630mW SC-62

Product Overview

Image:
2SK3074TE12LF
Manufacturer Part#: 2SK3074TE12LF
Product Category: Transistors - FETs, MOSFETs - RF
Stock: No
Manufacturer: Toshiba Semiconductor and Storage
Description: RF Mosfet N-Channel 9.6V 50mA 520MHz 14.9dB 630mW SC-62
Datasheet: 2SK3074
Package: TO-243AA
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

2SK3074TE12LF Images are for reference only.

2SK3074TE12LF

CAD Models

Product Attributes

Series: -
Part Status: Discontinued at Digi-Key
Transistor Type: N-Channel
Frequency: 520MHz
Gain: 14.9dB
Voltage - Test: 9.6V
Current Rating (Amps): 1A
Noise Figure: -
Current - Test: 50mA
Power - Output: 630mW
Voltage - Rated: 30V
Package / Case: TO-243AA
Supplier Device Package: SC-62
Mfr: Toshiba Semiconductor and Storage
Package: Cut Tape (CT)Digi-Reel®
Base Product Number: TK15

Descriptions

There is no relevant information available for this part yet.

FEATURES

RF POWER MOSFET

FOR VHF−AND UHF-BAND POWER AMPLIFIER

(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

Output Power : PO ≥ 630mW

Power Gain : GP ≥ 14.9dB
Drain Efficiency : ηD ≥ 45%

Environmental & Export Classifications

Description Value
RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.29.0095

Documents & Media

Datasheets: 2SK3074

Popularity by Region

  • 1. China
    100
  • 2. Singapore
    91
  • 3. New Zealand
    89
  • 4. Japan
    89
  • 5. Brazil
    87
  • 6. Luxembourg
    84
  • 7. Egypt
    84
  • 8. Germany
    83
  • 9. Australia
    83
  • 10. Hong Kong
    82
  • 11. Malaysia
    82
  • 12. Slovakia
    82
  • 13. Canada
    81
  • 14. Italy
    80
  • 15. South Africa
    79
  • 16. Thailand
    77
  • 17. Taiwan
    77
  • 18. Faroe Islands
    77
  • 19. Switzerland
    75
  • 20. Sweden
    75
  • 21. Andorra
    74
  • 22. India
    73
  • 23. Argentina
    73
  • 24. Ukraine
    73
  • 25. Czech Republic
    71
  • 26. Spain
    70
  • 27. Denmark
    70
  • 28. United Kingdom
    70
  • 29. Mexico
    70
  • 30. Puerto Rico
    69
  • 31. France
    69
  • 32. South Korea
    68
  • 33. Philippines
    67
  • 34. Chile
    65
  • 35. Israel
    63
  • 36. United States
    62
  • 37. Hungary
    58
  • 38. Russia
    58

2SK3074TE12LF Popularity by Region

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Customer has to take charge for the shipping.
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If the customer complains the product is "renovation/fake/having quality problem", and ask for a change or refund, the related procedures can be carried out only after an effective test report from a authoritative third party was provided.
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2SK3074TE12LF
RF Mosfet N-Channel 9.6V 50mA 520MHz 14.9dB 630mW SC-62
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Discontinued at Digi-Key
Transistor Type: N-Channel
Frequency: 520MHz
Gain: 14.9dB
Voltage - Test: 9.6V
Current Rating (Amps): 1A
Noise Figure: -
Current - Test: 50mA
Power - Output: 630mW
Voltage - Rated: 30V
Package / Case: TO-243AA
Supplier Device Package: SC-62
Mfr: Toshiba Semiconductor and Storage
Package: Cut Tape (CT)Digi-Reel®
Base Product Number: TK15

There is no relevant information available for this part yet.

FEATURES

RF POWER MOSFET

FOR VHF−AND UHF-BAND POWER AMPLIFIER

(Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

Output Power : PO ≥ 630mW

Power Gain : GP ≥ 14.9dB
Drain Efficiency : ηD ≥ 45%

There is no relevant information available for this part yet.