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Home  Transistors - Bipolar (BJT) - Single  2SC5359-O(Q) Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 230V 15A 30MHz 180W Through Hole TO-3P(L)

Mar 2 2021

2SC5359-O(Q) Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 230V 15A 30MHz 180W Through Hole TO-3P(L)

Product Overview

Image:
2SC5359-O-Q
Manufacturer Part#: 2SC5359-O(Q)
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: Toshiba Semiconductor and Storage
Description: Bipolar (BJT) Transistor NPN 230V 15A 30MHz 180W Through Hole TO-3P(L)
Datasheet: 2SC5359
Package: TO-3PL
Minimum: 1
Lead Time: 12 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
100: 2.24100 224.10000

2SC5359-O(Q) Images are for reference only.

2SC5359-O(Q)

CAD Models

Product Attributes

Series: *
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib Ic: 3V @ 800mA 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 80 @ 1A 5V
Power - Max: 180W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)
Mfr: Toshiba Semiconductor and Storage
Package: Bulk
Base Product Number: 2SA2097

Alternative Models

Toshiba 2SC5200-O(Q)
priceUSD 1.719
Power Dissipation150 W
hFE Min80
Collector Emitter Saturation Voltage-
Transition Frequency30 MHz
Max Collector Current15 A
Collector Emitter Breakdown Voltage230 V
PolarityNPN
Case/Package-
MountThrough Hole
Authorized Distributors11
Toshiba 2SC5242-O(Q)
priceUSD 1.476
Power Dissipation130 W
hFE Min80
Collector Emitter Saturation Voltage400 mV
Transition Frequency30 MHz
Max Collector Current15 A
Collector Emitter Breakdown Voltage230 V
PolarityNPN
Case/Package-
MountThrough Hole
Authorized Distributors4
ON Semiconductor MJL0281AG
priceUSD 2.314
Power Dissipation-
hFE Min75
Collector Emitter Saturation Voltage-
Transition Frequency30 MHz
Max Collector Current15 A
Collector Emitter Breakdown Voltage260 V
PolarityNPN
Case/PackageTO-264-3
MountThrough Hole
Authorized Distributors2
NJL0281DG
ON Semiconductor NJL0281DG
priceUSD 2.062
Power Dissipation180 W
hFE Min75
Collector Emitter Saturation Voltage1 V
Transition Frequency30 MHz
Max Collector Current15 A
Collector Emitter Breakdown Voltage260 V
PolarityNPN
Case/PackageTO-264
MountThrough Hole
Authorized Distributors10
Toshiba TTC5200(Q)
priceUSD 1.528
Power Dissipation150 W
hFE Min80
Collector Emitter Saturation Voltage3 V
Transition Frequency30 MHz
Max Collector Current15 A
Collector Emitter Breakdown Voltage230 V
PolarityNPN
Case/Package-
MountThrough Hole
Authorized Distributors8

Descriptions

Trans GP BJT NPN 230V 15A 180000mW 3-Pin(3+Tab) TO-3PL Tray:Verical
Transistor (200)/300V. 15A:WPG Americas

FEATURES

Power Amplifier Applications

• High breakdown voltage: VCEO= 230 V
• Complementary to 2SA1987
• Suitable for use in 100-W high fidelity audio amplifier’s output stage.

Environmental & Export Classifications

Description Value
RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Not Applicable
ECCN: EAR99
HTSUS: 8541.29.0075

Documents & Media

Datasheets: 2SC5359
EDA / CAD Models: 2SC5359-O(Q) by Ultra Librarian

Popularity by Region

  • 1. Egypt
    100
  • 2. Grenada
    98
  • 3. Czech Republic
    97
  • 4. Luxembourg
    97
  • 5. Bulgaria
    97
  • 6. Belarus
    95
  • 7. Dominican Republic
    92
  • 8. Sweden
    91
  • 9. Finland
    90
  • 10. Tunisia
    89
  • 11. Aruba
    89
  • 12. United Kingdom
    88
  • 13. Russia
    88
  • 14. Slovenia
    88
  • 15. Cambodia
    86
  • 16. Indonesia
    86
  • 17. Serbia
    86
  • 18. Saint Helena, Ascension and Tristan da Cunha
    85
  • 19. Thailand
    85
  • 20. Taiwan
    85
  • 21. Jordan
    85
  • 22. Moldova
    84
  • 23. Madagascar
    84
  • 24. Switzerland
    84
  • 25. Kenya
    84
  • 26. Mauritania
    84
  • 27. Rwanda
    84
  • 28. Paraguay
    84
  • 29. Uruguay
    83
  • 30. Mali
    83
  • 31. Burkina Faso
    83
  • 32. Algeria
    83
  • 33. Canada
    83
  • 34. Peru
    83
  • 35. Mexico
    83
  • 36. Guatemala
    83
  • 37. Ethiopia
    83
  • 38. Austria
    82
  • 39. Kazakhstan
    82
  • 40. Spain
    82
  • 41. Belgium
    82
  • 42. New Zealand
    82
  • 43. Trinidad and Tobago
    82
  • 44. Laos
    81
  • 45. Australia
    81
  • 46. South Africa
    81
  • 47. Venezuela
    81
  • 48. Lithuania
    81
  • 49. Poland
    80
  • 50. Pakistan
    80
  • 51. Tanzania
    80
  • 52. Colombia
    80
  • 53. Equatorial Guinea
    80
  • 54. Jamaica
    80
  • 55. Sri Lanka
    80
  • 56. Romania
    80
  • 57. Denmark
    79
  • 58. France
    79
  • 59. Singapore
    79
  • 60. United Arab Emirates
    79
  • 61. Argentina
    79
  • 62. Djibouti
    79
  • 63. South Korea
    78
  • 64. Vietnam
    78
  • 65. Myanmar
    78
  • 66. India
    78
  • 67. Hong Kong
    78
  • 68. Japan
    78
  • 69. Saudi Arabia
    77
  • 70. Greece
    77
  • 71. Norway
    77
  • 72. Latvia
    77
  • 73. Burundi
    77
  • 74. Mauritius
    77
  • 75. Namibia
    77
  • 76. Nigeria
    77
  • 77. Bangladesh
    77
  • 78. Togo
    77
  • 79. Portugal
    77
  • 80. Hungary
    76
  • 81. Israel
    76
  • 82. Bosnia and Herzegovina
    76
  • 83. Ecuador
    76
  • 84. Malaysia
    76
  • 85. Democratic Republic of the Congo
    76
  • 86. Lesotho
    76
  • 87. Ukraine
    75
  • 88. China
    75
  • 89. Morocco
    75
  • 90. Germany
    75
  • 91. Oman
    75
  • 92. Benin
    75
  • 93. Gambia
    75
  • 94. United States
    74
  • 95. Puerto Rico
    74
  • 96. Virgin Islands, U
    73
  • 97. Angola
    73
  • 98. Ivory Coast
    73
  • 99. Cameroon
    73
  • 100. Gabon
    73
  • 101. Guinea
    73
  • 102. Marshall Islands
    73
  • 103. Mozambique
    73
  • 104. Malawi
    73
  • 105. Seychelles
    73
  • 106. Iceland
    73
  • 107. Mongolia
    73
  • 108. Palestinian Territory
    73
  • 109. Reunion
    73
  • 110. Northern Mariana Islands
    73
  • 111. Costa Rica
    73
  • 112. Haiti
    73
  • 113. Netherlands
    73
  • 114. Armenia
    72
  • 115. Bolivia
    72
  • 116. Georgia
    72
  • 117. Nepal
    72
  • 118. Kuwait
    72
  • 119. Congo
    71
  • 120. Ghana
    71
  • 121. Niger
    71
  • 122. Senegal
    71
  • 123. Sierra Leone
    71
  • 124. Zambia
    71
  • 125. Zimbabwe
    71
  • 126. Afghanistan
    71
  • 127. Italy
    70
  • 128. El Salvador
    68
  • 129. Chile
    66
  • 130. Brazil
    66
  • 131. Philippines
    64
  • 132. Turkey
    64
  • 133. Croatia
    59

2SC5359-O(Q) Popularity by Region

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2SC5359-O-Q
Bipolar (BJT) Transistor NPN 230V 15A 30MHz 180W Through Hole TO-3P(L)
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: *
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 230V
Vce Saturation (Max) @ Ib Ic: 3V @ 800mA 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 80 @ 1A 5V
Power - Max: 180W
Frequency - Transition: 30MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3PL
Supplier Device Package: TO-3P(L)
Mfr: Toshiba Semiconductor and Storage
Package: Bulk
Base Product Number: 2SA2097

Trans GP BJT NPN 230V 15A 180000mW 3-Pin(3+Tab) TO-3PL Tray:Verical
Transistor (200)/300V. 15A:WPG Americas

FEATURES

Power Amplifier Applications

• High breakdown voltage: VCEO= 230 V
• Complementary to 2SA1987
• Suitable for use in 100-W high fidelity audio amplifier’s output stage.

There is no relevant information available for this part yet.