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Aug 4 2021

TPS1100DR Datasheets | Transistors - FETs, MOSFETs - Single P-Channel 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC

Product Overview

Manufacturer Part#: TPS1100DR
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: N/A
Description: P-Channel 1.6A (Ta) 791mW (Ta) Surface Mount 8-SOIC
Datasheet: TPS1100, TPS1100Y
Package: 8-SOIC (0.154", 3.90mm Width)
Minimum: 1
Lead Time: 6 Weeks
Quantity: On Order
Send RFQ: Buy

Reference Price

Qty Unit Price Ext. Price
2500: 0.84875 2121.87500

TPS1100DR Images are for reference only.


CAD Models

Product Attributes

Series: -
Part status: AcN/Ave
Fet type: P-channel
Technology: Mosfet (metal oxide)
Drain to source voltage (vdss): 15 v
Current - conN/Anuous drain (id) @ 25°c: 1.6a (ta)
Rds on (max) @ id vgs: 180mohm @ 1.5a 10v
Vgs(th) (max) @ id: 1.5v @ 250µa
Gate charge (qg) (max) @ vgs: 5.45 nc @ 10 v
Vgs (max): +2v -15v
Fet feature: -
Power dissipaN/Aon (max): 791mw (ta)
OperaN/Ang temperature: -40°c ~ 150°c (tj)
MounN/Ang type: Surface mount
Supplier device package: 8-soic
Package / case: 8-soic (0.154" 3.90mm width)
Mfr: N/A
Package: Tape & reel (tr)
Base product number: Tps1100
Drive voltage (max rds on min rds on): 2.7v 10v


There is no relevant information available for this part yet.

Environmental & Export Classifications

Description Value
Rohs status: Rohs3 compliant
Moisture sensiN/Avity level (msl): 1 (unlimited)
Reach status: Reach unaffected
Eccn: Ear99
Htsus: 8541.21.0095

Documents & Media

Datasheets: TPS1100, TPS1100Y
Featured Product: Power Management
Manufacturer Product Page: TPS1100DR Specifications
EDA / CAD Models: TPS1100DR by SnapEDA

Product Manufacturer

n/a incorporated (N/A) is a global semiconductor design and manufacturing company that develops analog ics and embedded processors. by employing the world's brightest minds, N/A creates innovaN/Aons that shape the future of technology. N/A is helping more than 100,000 customers transform the future, today.

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# 0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
P-channel 1.6a (ta) 791mw (ta) surface mount 8-soic
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 15 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id Vgs: 180mOhm @ 1.5A 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.45 nC @ 10 V
Vgs (Max): +2V -15V
FET Feature: -
Power Dissipation (Max): 791mW (Ta)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Package / Case: 8-SOIC (0.154" 3.90mm Width)
Mfr: Texas Instruments
Package: Tape & Reel (TR)
Base Product Number: TPS1100
Drive Voltage (Max Rds On Min Rds On): 2.7V 10V

There is no relevant information available for this part yet.

There is no relevant information available for this part yet.

There is no relevant information available for this part yet.