The CSD86311W1723 parts manufactured by TI are available for purchase at Jotrin Electronics website. Here you can find a wide variety of types and values of electronic parts from the world's leading manufacturers.
The CSD86311W1723 components of Jotrin Electronics are carefully chosen, undergo stringent quality control, and are successfully meet all required standards.
The production status marked on Jotrin.com is for reference only.
If you did not find what you were looking for, you can get more value information by email, such as the CSD86311W1723 Inventory quantity, preferential price, and manufacturer.
We are always happy to hear from you so feel free to contact us.
The CSD85312Q3E is MOSFET 2N-CH 20V 39A 8VSON, that includes NexFET? Series, they are designed to operate with a Digi-ReelR Alternate Packaging Packaging, Mounting Style is shown on datasheet note for use in a SMD/SMT, that offers Tradename features such as NexFET, Package Case is designed to work in 8-PowerVDFN, as well as the Si Technology, it has an Operating Temperature range of -55°C ~ 150°C (TJ). In addition, the Mounting Type is Surface Mount, the device is offered in 2 Channel Number of Channels, the device has a 8-VSON (3.3x3.3) of Supplier Device Package, and Configuration is Dual Common Source, and the FET Type is 2 N-Channel (Dual) Common Source, and Power Max is 2.5W, and the Transistor Type is 2 N-Channel, and Drain to Source Voltage Vdss is 20V, and the Input Capacitance Ciss Vds is 2390pF @ 10V, and FET Feature is Logic Level Gate, 5V Drive, and the Current Continuous Drain Id 25°C is 39A, and Rds On Max Id Vgs is 12.4 mOhm @ 10A, 8V, and the Vgs th Max Id is 1.4V @ 250μA, and Gate Charge Qg Vgs is 15.2nC @ 4.5V, and the Pd Power Dissipation is 2.5 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and Fall Time is 6 ns, and the Rise Time is 27 ns, and Vgs Gate Source Voltage is 10 V, and the Id Continuous Drain Current is 76 A, and Vds Drain Source Breakdown Voltage is 20 V, and the Vgs th Gate Source Threshold Voltage is 1.1 V, and Rds On Drain Source Resistance is 14 mOhms, and the Transistor Polarity is N-Channel, and Typical Turn Off Delay Time is 24 ns, and the Typical Turn On Delay Time is 11 ns, and Qg Gate Charge is 11.7 nC, and the Forward Transconductance Min is 99 S.
The CSD85302L is MOSFET 2N-CH 20V 5A, that includes 680 mV Vgs th Gate Source Threshold Voltage, they are designed to operate with a +/- 10 V Vgs Gate Source Voltage, Vds Drain Source Breakdown Voltage is shown on datasheet note for use in a 20 V, that offers Typical Turn On Delay Time features such as 37 ns, Typical Turn Off Delay Time is designed to work in 173 ns, as well as the 2 N-Channel Transistor Type, the device can also be used as N-Channel Transistor Polarity. In addition, the Technology is Si, the device is offered in 4-Picostar (1.31x1.31) Supplier Device Package, the device has a NexFET? of Series, and Rise Time is 54 ns, and the Rds On Drain Source Resistance is 36 mOhms, and Qg Gate Charge is 6 nC, and the Power Max is 1.7W, and Pd Power Dissipation is 1.7 W, and the Packaging is Tape & Reel (TR) Alternate Packaging, and Package Case is 4-XFLGA, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and Number of Channels is 2 Channel, and the Mounting Style is SMD/SMT, and Mounting Type is Surface Mount, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Id Continuous Drain Current is 7 A, and Gate Charge Qg Vgs is 7.8nC @ 4.5V, and the FET Type is 2 N-Channel (Dual) Common Drain, and FET Feature is Standard, and the Fall Time is 99 ns, and Configuration is Dual, and the Channel Mode is Enhancement.
The CSD85302LT is MOSFET 2N-CH, that includes Enhancement Channel Mode, they are designed to operate with a Dual Configuration, Fall Time is shown on datasheet note for use in a 99 ns, that offers FET Feature features such as Standard, FET Type is designed to work in 2 N-Channel (Dual) Common Drain, as well as the 7.8nC @ 4.5V Gate Charge Qg Vgs, the device can also be used as 7 A Id Continuous Drain Current, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, the device has a Surface Mount of Mounting Type, and Mounting Style is SMD/SMT, and the Number of Channels is 2 Channel, it has an Operating Temperature range of -55°C ~ 150°C (TJ), and the Package Case is 4-XFLGA, and Packaging is Digi-ReelR Alternate Packaging, and the Pd Power Dissipation is 1.7 W, and Power Max is 1.7W, and the Qg Gate Charge is 6 nC, and Rds On Drain Source Resistance is 36 mOhms, and the Rise Time is 54 ns, and Series is NexFET?, and the Supplier Device Package is 4-Picostar (1.31x1.31), and Technology is Si, and the Transistor Polarity is N-Channel, and Transistor Type is 2 N-Channel, and the Typical Turn Off Delay Time is 173 ns, and Typical Turn On Delay Time is 37 ns, and the Vds Drain Source Breakdown Voltage is 20 V, and Vgs Gate Source Voltage is +/- 10 V, and the Vgs th Gate Source Threshold Voltage is 680 mV.