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Mar 2 2021

S29GL128P90FFCR10A Datasheets | Memory FLASH - NOR Memory IC 128Mb (16M x 8) Parallel 90ns 64-FBGA (13x11)

Product Overview

Image:
S29GL128P90FFCR10A
Manufacturer Part#: S29GL128P90FFCR10A
Product Category: Memory
Stock: No
Manufacturer: Spansion
Description: FLASH - NOR Memory IC 128Mb (16M x 8) Parallel 90ns 64-FBGA (13x11)
Datasheet: N/A
Package: 64-LBGA
Minimum: 1
Lead Time: 1 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
51: 4.97000 253.47000

S29GL128P90FFCR10A Images are for reference only.

S29GL128P90FFCR10A

CAD Models

Product Attributes

Series: GL-P
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Write Cycle Time - Word Page: 90ns
Access Time: 90ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)
Mfr: Spansion
Package: Bulk

Descriptions

NOR Flash Parallel 3.3V 128Mbit 8M x 16bit 90ns 64-Pin FBGA Tray:Avnet
TRAY PKGED / IC 128M PAGE-MODE FLASH MEMORY:Newark

FEATURES

1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

General Description

The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

■ Single 3V read/program/erase (2.7-3.6 V)
■ Enhanced VersatileI/O™ control
– All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
■ 90 nm MirrorBit process technology
■ 8-word/16-byte page read buffer
■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
■ Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the customer
■ Uniform 64 Kword/128 Kbyte Sector Architecture
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
■ 100,000 erase cycles per sector typical
■ 20-year data retention typical
■ Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
■ Suspend and Resume commands for Program and Erase operations
■ Write operation status bits indicate program and erase operation completion
■ Unlock Bypass Program command to reduce programming time
■ Support for CFI (Common Flash Interface)
■ Persistent and Password methods of Advanced Sector Protection
■ WP#/ACC input
– Accelerates programming time (when VHH is applied) for greater throughput during system production
– Protects first or last sector regardless of sector protection settings
■ Hardware reset input (RESET#) resets device
■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 

Environmental & Export Classifications

Description Value
RoHS Status: Not applicable
Moisture Sensitivity Level (MSL): 3 (168 Hours)
REACH Status: Vendor Undefined

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S29GL128P90FFCR10A
FLASH - NOR Memory IC 128Mb (16M x 8) Parallel 90ns 64-FBGA (13x11)
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: GL-P
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Write Cycle Time - Word Page: 90ns
Access Time: 90ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)
Mfr: Spansion
Package: Bulk

NOR Flash Parallel 3.3V 128Mbit 8M x 16bit 90ns 64-Pin FBGA Tray:Avnet
TRAY PKGED / IC 128M PAGE-MODE FLASH MEMORY:Newark

FEATURES

1 Gigabit, 512 Megabit, 256 Megabit and 128 Megabit 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology

General Description

The Spansion S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

Distinctive Characteristics

■ Single 3V read/program/erase (2.7-3.6 V)
■ Enhanced VersatileI/O™ control
– All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
■ 90 nm MirrorBit process technology
■ 8-word/16-byte page read buffer
■ 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
■ Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the customer
■ Uniform 64 Kword/128 Kbyte Sector Architecture
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
■ 100,000 erase cycles per sector typical
■ 20-year data retention typical
■ Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
■ Suspend and Resume commands for Program and Erase operations
■ Write operation status bits indicate program and erase operation completion
■ Unlock Bypass Program command to reduce programming time
■ Support for CFI (Common Flash Interface)
■ Persistent and Password methods of Advanced Sector Protection
■ WP#/ACC input
– Accelerates programming time (when VHH is applied) for greater throughput during system production
– Protects first or last sector regardless of sector protection settings
■ Hardware reset input (RESET#) resets device
■ Ready/Busy# output (RY/BY#) detects program or erase cycle completion

 

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