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H5TQ4G63CFR-RDC Datasheets | DRAMs DDR DRAM, 256MX16, CMOS, PBGA96, FPBGA-96

By apogeeweb, H5TQ4G63CFR-RDC, H5TQ4G63CFR-RDC Datasheet,H5TQ4G63CFR-RDC PDF,SK Hynix Inc

Product Overview

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H5TQ4G63CFR-RDC
Manufacturer Part#: H5TQ4G63CFR-RDC
Product Category: DRAMs
Stock: On Order
Manufacturer: SK Hynix Inc
Description: DDR DRAM, 256MX16, CMOS, PBGA96, FPBGA-96
Datasheet: N/A
Package: TFBGA,
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer Part Number: H5TQ4G63CFR-RDC
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SK HYNIX INC
Package Description: TFBGA,
Reach Compliance Code: compliant
Manufacturer: SK Hynix Inc
Risk Rank: 5.6
Access Mode: MULTI BANK PAGE BURST
Additional Feature: AUTO/SELF REFRESH
JESD-30 Code: R-PBGA-B96
Length: 13 mm
Memory Density: 4294967296 bit
Memory IC Type: DDR DRAM
Memory Width: 16
Number of Functions: 1
Number of Terminals: 96
Number of Words: 268435456 words
Number of Words Code: 256000000
Operating Mode: SYNCHRONOUS
Operating Temperature-Max: 85 °C
Organization: 256MX16
Package Body Material: PLASTIC/EPOXY
Package Code: TFBGA
Package Shape: RECTANGULAR
Package Style: GRID ARRAY, THIN PROFILE, FINE PITCH
Seated Height-Max: 1.2 mm
Self Refresh: YES
Supply Voltage-Max (Vsup): 1.575 V
Supply Voltage-Min (Vsup): 1.425 V
Technology: CMOS
Temperature Grade: OTHER
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Width: 7.5 mm
Peak Reflow Temperature (Cel): NOT SPECIFIED
Supply Voltage-Nom (Vsup): 1.5 V
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