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K4T1G164QQ-HCE6 Datasheets | DRAMs DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84

By apogeeweb, K4T1G164QQ-HCE6, K4T1G164QQ-HCE6 Datasheet,K4T1G164QQ-HCE6 PDF,Samsung Semiconductor

Product Overview

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K4T1G164QQ-HCE6
Manufacturer Part#: K4T1G164QQ-HCE6
Product Category: DRAMs
Stock: On Order
Manufacturer: Samsung
Description: DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84
Datasheet: N/A
Package: FBGA, BGA84,9X15,32
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer Part Number: K4T1G164QQ-HCE6
Rohs Code: Yes
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SAMSUNG SEMICONDUCTOR INC
Package Description: FBGA, BGA84,9X15,32
Reach Compliance Code: unknown
Manufacturer: Samsung Semiconductor
Risk Rank: 5.8
Access Time-Max: 0.45 ns
I/O Type: COMMON
JESD-30 Code: R-PBGA-B84
Memory Density: 1073741824 bit
Memory IC Type: DDR DRAM
Memory Width: 16
Number of Terminals: 84
Number of Words: 67108864 words
Number of Words Code: 64000000
Organization: 64MX16
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: FBGA
Package Equivalence Code: BGA84,9X15,32
Package Shape: RECTANGULAR
Package Style: GRID ARRAY, FINE PITCH
Power Supplies: 1.8 V
Qualification Status: Not Qualified
Refresh Cycles: 8192
Standby Current-Max: 0.015 A
Subcategory: DRAMs
Supply Current-Max: 0.245 mA
Technology: CMOS
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Clock Frequency-Max (fCLK): 333 MHz
Interleaved Burst Length: 4,8
Surface Mount: YES
Moisture Sensitivity Level: 3
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  • Features
  • Product Manufacturer

The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.

Key Features

• JEDEC standard 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latency: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
- PASR(Partial Array Self Refresh)
- 50ohm ODT
- High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
• All of Lead-free products are compliant for RoHS

 

Samsung ARTIK, a product line of Samsung Semiconductor, is an integrated IoT platform that provides a fast path to deliver secure, interoperable, and intelligent IoT products and services. ARTIK unifies hardware, software, cloud, security, and a partner ecosystem in a single integrated offering. It hides the inherent complexity of IoT behind easy-to-use, open, and enterprise-grade APIs, SDKs, and tools, enabling any device to interact with any third-party device, app, or service. Using Samsung ARTIK, enterprises can quickly bring new IoT solutions to market, tap into new revenue streams, and grow their businesses.

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