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Home  Transistors - FETs, MOSFETs - Single  2SK3386-Z-AZ Datasheets| Renesas Electronics America Inc | PDF| Price| In Stock

Mar 2 2021

2SK3386-Z-AZ Datasheets| Renesas Electronics America Inc | PDF| Price| In Stock

Product Overview

Image:
2SK3386-Z-AZ
Manufacturer Part#: 2SK3386-Z-AZ
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: Renesas Electronics America Inc
Description:
Datasheet: N/A
Package: N/A
Minimum: 1
Lead Time: 1 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
243: 0.94000 228.42000

CAD Models

Product Attributes

Series: *
Part Status: Active
Mfr: Renesas Electronics America Inc
Package: Bulk

Alternative Models

FDD3672
ON Semiconductor FDD3672
priceUSD 0.643
Input Capacitance1.71 nF
Power Dissipation135 W
Gate to Source Voltage (Vgs)20 V
Rds On Max28 mΩ
Threshold Voltage4 V
Continuous Drain Current (ID)44 A
Drain to Source Voltage (Vdss)100 V
Case/PackageTO-252
MountSurface Mount
Authorized Distributors12
FDD86102
ON Semiconductor FDD86102
priceUSD 0.606
Input Capacitance1.035 nF
Power Dissipation3.1 W
Gate to Source Voltage (Vgs)20 V
Rds On Max24 mΩ
Threshold Voltage3.1 V
Continuous Drain Current (ID)36 A
Drain to Source Voltage (Vdss)100 V
Case/PackageTO-252
MountSurface Mount
Authorized Distributors12
ON Semiconductor FDD8780
priceUSD 0.351
Input Capacitance1.44 nF
Power Dissipation50 W
Gate to Source Voltage (Vgs)20 V
Rds On Max8.5 mΩ
Threshold Voltage1.8 V
Continuous Drain Current (ID)35 A
Drain to Source Voltage (Vdss)25 V
Case/PackageTO-252
MountSurface Mount
Authorized Distributors11
IPD090N03LGATMA1
Infineon IPD090N03LGATMA1
priceUSD 0.244
Input Capacitance1.2 nF
Power Dissipation42 W
Gate to Source Voltage (Vgs)20 V
Rds On Max9 mΩ
Threshold Voltage-
Continuous Drain Current (ID)40 A
Drain to Source Voltage (Vdss)30 V
Case/PackageTO-252
MountSurface Mount
Authorized Distributors14
IPD180N10N3GATMA1
Infineon IPD180N10N3GATMA1
priceUSD 0.457
Input Capacitance1.35 nF
Power Dissipation71 W
Gate to Source Voltage (Vgs)20 V
Rds On Max-
Threshold Voltage2.7 V
Continuous Drain Current (ID)43 A
Drain to Source Voltage (Vdss)100 V
Case/PackageDPAK
MountSurface Mount
Authorized Distributors9

Descriptions

Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) TO-252:Chip One Stop Japan
Nch Single Power Mosfet 60V 34A 21Mohm Mp-3Z/To-252:Integrated Device Technology
SMALL SIGNAL N-CHANNEL MOSFET:Digi-Key

FEATURES

DESCRIPTION

The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Low On-state Resistance
RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A)
RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A)
• Low Ciss : Ciss = 2100 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095

Popularity by Region

  • 1. Egypt
    100
  • 2. Singapore
    96
  • 3. Czech Republic
    92
  • 4. Norway
    92
  • 5. Sweden
    90
  • 6. Finland
    89
  • 7. Chile
    89
  • 8. Bolivia
    87
  • 9. Solomon Islands
    87
  • 10. Mauritius
    87
  • 11. Suriname
    87
  • 12. Greece
    86
  • 13. Slovenia
    85
  • 14. South Africa
    84
  • 15. Argentina
    83
  • 16. Switzerland
    83
  • 17. Latvia
    83
  • 18. Gambia
    83
  • 19. Mauritania
    82
  • 20. Reunion
    82
  • 21. Malta
    82
  • 22. Pakistan
    82
  • 23. Canada
    82
  • 24. Ecuador
    82
  • 25. Hong Kong
    81
  • 26. Australia
    81
  • 27. Israel
    80
  • 28. Panama
    80
  • 29. Belarus
    80
  • 30. Albania
    79
  • 31. Andorra
    79
  • 32. Tunisia
    79
  • 33. Kyrgyzstan
    79
  • 34. Mexico
    79
  • 35. Spain
    79
  • 36. Nigeria
    79
  • 37. Croatia
    79
  • 38. Hungary
    78
  • 39. Indonesia
    78
  • 40. Poland
    78
  • 41. Thailand
    77
  • 42. Malaysia
    77
  • 43. China
    76
  • 44. Belgium
    76
  • 45. France
    76
  • 46. Turkey
    75
  • 47. Netherlands
    74
  • 48. Estonia
    71
  • 49. Japan
    68
  • 50. Italy
    68
  • 51. India
    68
  • 52. United Kingdom
    68
  • 53. Brazil
    67
  • 54. South Korea
    62
  • 55. Russia
    62
  • 56. Germany
    62
  • 57. Philippines
    62
  • 58. Guatemala
    61
  • 59. Taiwan
    61
  • 60. United States
    61

2SK3386-Z-AZ Popularity by Region

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: *
Part Status: Active
Mfr: Renesas Electronics America Inc
Package: Bulk

Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) TO-252:Chip One Stop Japan
Nch Single Power Mosfet 60V 34A 21Mohm Mp-3Z/To-252:Integrated Device Technology
SMALL SIGNAL N-CHANNEL MOSFET:Digi-Key

FEATURES

DESCRIPTION

The 2SK3386 is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

• Low On-state Resistance
RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A)
RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A)
• Low Ciss : Ciss = 2100 pF TYP.
• Built-in Gate Protection Diode
• TO-251/TO-252 package

There is no relevant information available for this part yet.