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Home  Transistors - FETs, MOSFETs - Single  2SK1342-E Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 900V 8A (Ta) 100W (Tc) Through Hole TO-3P

Mar 2 2021

2SK1342-E Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 900V 8A (Ta) 100W (Tc) Through Hole TO-3P

Product Overview

Image:
2SK1342-E
Manufacturer Part#: 2SK1342-E
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: Renesas Electronics America Inc
Description: N-Channel 900V 8A (Ta) 100W (Tc) Through Hole TO-3P
Datasheet: 2SK1342
Package: TO-3P-3, SC-65-3
Minimum: 1
Lead Time: 24 Weeks
Quantity: On Order
Send RFQ: Inquiry

2SK1342-E Images are for reference only.

2SK1342-E

CAD Models

Product Attributes

Series: -
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 1.6Ohm @ 4A 10V
Vgs(th) (Max) @ Id: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3 SC-65-3
Mfr: Renesas Electronics America Inc
Package: Tube

Descriptions

There is no relevant information available for this part yet.

FEATURES

Features

• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter

Application

High speed power switching

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Affected
ECCN: EAR99
HTSUS: 8541.29.0095

Documents & Media

Datasheets: 2SK1342
Environmental Information: RoHS Compliance
EDA / CAD Models: 2SK1342-E by Ultra Librarian

Popularity by Region

  • 1. Chile
    100
  • 2. Australia
    88
  • 3. Taiwan
    87
  • 4. Austria
    84
  • 5. Angola
    83
  • 6. New Zealand
    83
  • 7. Venezuela
    83
  • 8. Spain
    82
  • 9. Mauritania
    82
  • 10. Philippines
    82
  • 11. Maldives
    82
  • 12. United Kingdom
    81
  • 13. South Korea
    80
  • 14. Egypt
    79
  • 15. Sweden
    79
  • 16. Sri Lanka
    78
  • 17. Vietnam
    78
  • 18. Fiji
    78
  • 19. Germany
    78
  • 20. Reunion
    78
  • 21. Hong Kong
    77
  • 22. Saint Pierre and Miquelon
    77
  • 23. Belarus
    76
  • 24. Tunisia
    76
  • 25. Estonia
    75
  • 26. France
    75
  • 27. Indonesia
    75
  • 28. Singapore
    75
  • 29. Malawi
    75
  • 30. Suriname
    75
  • 31. India
    75
  • 32. China
    74
  • 33. Argentina
    74
  • 34. Morocco
    74
  • 35. Slovakia
    74
  • 36. South Africa
    73
  • 37. Guatemala
    73
  • 38. Mexico
    73
  • 39. Senegal
    73
  • 40. Poland
    72
  • 41. Kazakhstan
    72
  • 42. Turkey
    72
  • 43. Thailand
    72
  • 44. Liberia
    72
  • 45. Italy
    72
  • 46. Luxembourg
    72
  • 47. Malaysia
    71
  • 48. Hungary
    71
  • 49. Finland
    71
  • 50. Norway
    71
  • 51. Canada
    71
  • 52. North Macedonia
    70
  • 53. Greece
    70
  • 54. Russia
    70
  • 55. Japan
    70
  • 56. Israel
    70
  • 57. Ecuador
    70
  • 58. Serbia
    69
  • 59. Bangladesh
    69
  • 60. Mauritius
    69
  • 61. Switzerland
    69
  • 62. United Arab Emirates
    69
  • 63. Romania
    68
  • 64. Kuwait
    68
  • 65. Iraq
    68
  • 66. Denmark
    68
  • 67. Tanzania
    67
  • 68. Peru
    67
  • 69. Nepal
    67
  • 70. Malta
    66
  • 71. Pakistan
    66
  • 72. Netherlands
    66
  • 73. Puerto Rico
    66
  • 74. Myanmar
    64
  • 75. Bulgaria
    64
  • 76. United States
    64
  • 77. Brazil
    59
  • 78. Czech Republic
    59
  • 79. Macao
    46

2SK1342-E Popularity by Region

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2SK1342-E
N-Channel 900V 8A (Ta) 100W (Tc) Through Hole TO-3P
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 1.6Ohm @ 4A 10V
Vgs(th) (Max) @ Id: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 10V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3 SC-65-3
Mfr: Renesas Electronics America Inc
Package: Tube

There is no relevant information available for this part yet.

FEATURES

Features

• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter

Application

High speed power switching

There is no relevant information available for this part yet.