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Home  Transistors - FETs, MOSFETs - Single  2SK1340-E Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 900V 5A (Ta) 100W (Tc) Through Hole TO-3P

Mar 2 2021

2SK1340-E Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 900V 5A (Ta) 100W (Tc) Through Hole TO-3P

Product Overview

Image:
2SK1340-E
Manufacturer Part#: 2SK1340-E
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: Renesas Electronics America Inc
Description: N-Channel 900V 5A (Ta) 100W (Tc) Through Hole TO-3P
Datasheet: 2SK1340-E
Package: TO-3P-3, SC-65-3
Minimum: 1
Lead Time: 20 Weeks
Quantity: On Order
Send RFQ: Inquiry

2SK1340-E Images are for reference only.

2SK1340-E

CAD Models

Product Attributes

Series: -
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 4Ohm @ 3A 10V
Vgs(th) (Max) @ Id: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3 SC-65-3
Mfr: Renesas Electronics America Inc
Package: Tube

Alternative Models

FQP3N90
ON Semiconductor FQP3N90
priceUSD 0.587
Input Capacitance910 pF
Power Dissipation130 W
Gate to Source Voltage (Vgs)30 V
Rds On Max4.25 Ω
Threshold Voltage-
Continuous Drain Current (ID)3.6 A
Drain to Source Voltage (Vdss)900 V
Case/PackageTO-220
MountThrough Hole
Authorized Distributors2
FQP4N80
ON Semiconductor FQP4N80
priceUSD 0.698
Input Capacitance880 pF
Power Dissipation130 W
Gate to Source Voltage (Vgs)30 V
Rds On Max3.6 Ω
Threshold Voltage-
Continuous Drain Current (ID)3.9 A
Drain to Source Voltage (Vdss)800 V
Case/PackageTO-220AB
MountThrough Hole
Authorized Distributors9
FQP4N90
ON Semiconductor FQP4N90
priceUSD 1.429
Input Capacitance1.1 nF
Power Dissipation140 W
Gate to Source Voltage (Vgs)30 V
Rds On Max3.3 Ω
Threshold Voltage-
Continuous Drain Current (ID)4.2 A
Drain to Source Voltage (Vdss)900 V
Case/PackageTO-220
MountThrough Hole
Authorized Distributors2
FQP4N90C
ON Semiconductor FQP4N90C
priceUSD 0.659
Input Capacitance960 pF
Power Dissipation140 W
Gate to Source Voltage (Vgs)30 V
Rds On Max4.2 Ω
Threshold Voltage5 V
Continuous Drain Current (ID)4 A
Drain to Source Voltage (Vdss)900 V
Case/PackageTO-220
MountThrough Hole
Authorized Distributors11
FQPF4N90C
ON Semiconductor FQPF4N90C
priceUSD 0.679
Input Capacitance960 pF
Power Dissipation47 W
Gate to Source Voltage (Vgs)30 V
Rds On Max4.2 Ω
Threshold Voltage5 V
Continuous Drain Current (ID)4 A
Drain to Source Voltage (Vdss)900 V
Case/PackageTO-220-3
MountThrough Hole
Authorized Distributors12

Descriptions

Trans MOSFET N-CH Si 900V 5A 3-Pin(3+Tab) TO-3P Tube:Chip One Stop Global
Nch Single Power Mosfet 900V 5A 4000Mohm To-3P:Integrated Device Technology
MOSFET N-CH 900V 5A TO3P:Digi-Key

FEATURES

* Output current up to 100 mA


* Output voltages of 3.3; 5; 6; 8; 9; 10; 12; 15; 18;24 V

* Thermal overload protection

* Short-circuit protection

* No external components are required

* Available in either ± 4% (AC) or ± 8% (C) selection

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Affected
ECCN: EAR99
HTSUS: 8541.29.0095

Documents & Media

Datasheets: 2SK1340-E
Environmental Information: RoHS Compliance
EDA / CAD Models: 2SK1340-E by Ultra Librarian

Popularity by Region

  • 1. Austria
    100
  • 2. Egypt
    100
  • 3. Ghana
    99
  • 4. Denmark
    97
  • 5. Poland
    96
  • 6. Switzerland
    94
  • 7. New Zealand
    94
  • 8. Venezuela
    93
  • 9. Mauritania
    93
  • 10. Maldives
    92
  • 11. Russia
    92
  • 12. United Kingdom
    92
  • 13. Sri Lanka
    88
  • 14. Fiji
    88
  • 15. Chile
    88
  • 16. Belarus
    88
  • 17. Sweden
    88
  • 18. Reunion
    88
  • 19. Japan
    88
  • 20. Argentina
    87
  • 21. Saint Pierre and Miquelon
    87
  • 22. Malaysia
    86
  • 23. Australia
    86
  • 24. Tunisia
    86
  • 25. Dominican Republic
    85
  • 26. Hong Kong
    85
  • 27. Vietnam
    85
  • 28. Canada
    85
  • 29. Estonia
    85
  • 30. Bolivia
    85
  • 31. Malawi
    84
  • 32. Suriname
    84
  • 33. Luxembourg
    83
  • 34. Morocco
    83
  • 35. Slovakia
    83
  • 36. Romania
    83
  • 37. South Africa
    82
  • 38. Mexico
    82
  • 39. Senegal
    82
  • 40. Netherlands
    82
  • 41. Kazakhstan
    82
  • 42. Turkey
    81
  • 43. France
    81
  • 44. Liberia
    81
  • 45. China
    81
  • 46. Spain
    81
  • 47. Latvia
    81
  • 48. Hungary
    80
  • 49. Finland
    80
  • 50. Norway
    80
  • 51. Germany
    80
  • 52. Singapore
    80
  • 53. Kenya
    80
  • 54. North Macedonia
    79
  • 55. Greece
    79
  • 56. Israel
    79
  • 57. Nigeria
    79
  • 58. United States
    79
  • 59. Serbia
    78
  • 60. Bangladesh
    78
  • 61. Indonesia
    78
  • 62. Mauritius
    78
  • 63. Djibouti
    78
  • 64. United Arab Emirates
    78
  • 65. Pakistan
    77
  • 66. Portugal
    77
  • 67. Kuwait
    77
  • 68. Iraq
    77
  • 69. Iceland
    76
  • 70. Belgium
    76
  • 71. El Salvador
    76
  • 72. Bosnia and Herzegovina
    75
  • 73. Tanzania
    75
  • 74. Nepal
    75
  • 75. Malta
    75
  • 76. Bulgaria
    74
  • 77. Puerto Rico
    74
  • 78. Slovenia
    73
  • 79. Croatia
    73
  • 80. Saudi Arabia
    73
  • 81. Myanmar
    73
  • 82. Uganda
    73
  • 83. Ukraine
    72
  • 84. Peru
    72
  • 85. India
    72
  • 86. Philippines
    72
  • 87. Czech Republic
    72
  • 88. Taiwan
    72
  • 89. Brazil
    67
  • 90. Guatemala
    67
  • 91. Ireland
    65
  • 92. Italy
    65
  • 93. South Korea
    65
  • 94. Thailand
    65
  • 95. Dominica
    64
  • 96. Macao
    38

2SK1340-E Popularity by Region

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2SK1340-E
N-Channel 900V 5A (Ta) 100W (Tc) Through Hole TO-3P
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 4Ohm @ 3A 10V
Vgs(th) (Max) @ Id: -
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 10V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3P
Package / Case: TO-3P-3 SC-65-3
Mfr: Renesas Electronics America Inc
Package: Tube

Trans MOSFET N-CH Si 900V 5A 3-Pin(3+Tab) TO-3P Tube:Chip One Stop Global
Nch Single Power Mosfet 900V 5A 4000Mohm To-3P:Integrated Device Technology
MOSFET N-CH 900V 5A TO3P:Digi-Key

FEATURES

* Output current up to 100 mA


* Output voltages of 3.3; 5; 6; 8; 9; 10; 12; 15; 18;24 V

* Thermal overload protection

* Short-circuit protection

* No external components are required

* Available in either ± 4% (AC) or ± 8% (C) selection

There is no relevant information available for this part yet.