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TN6718A Datasheets | Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 100 V 1.2 A 1 W Through Hole TO-226-3

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Product Overview

Image:
TN6718A
Manufacturer Part#: TN6718A
Product Category: Bipolar (BJT) - Single
Stock: No
Manufacturer: onsemi
Description: Bipolar (BJT) Transistor NPN 100 V 1.2 A 1 W Through Hole TO-226-3
Datasheet: N/A
Package: N/A
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order

TN6718A Images are for reference only.

TN6718A

CAD Models

Product Attributes

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Series: -
Transistor Type: NPN
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Vce Saturation (Max) @ Ib Ic: 500mV @ 10mA 250mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 50 @ 250mA 1V
Power - Max: 1 W
Frequency - Transition: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3 TO-92-3 (TO-226AA)
Supplier Device Package: TO-226-3
Mfr: onsemi
Package: Bulk
Base Product Number: TN6718
Product Status: Obsolete
Package / Case:
3-PowerUDFN
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Descriptions

Bipolar (BJT) Transistor NPN 100V 1.2A 1W Through Hole TO-226:Avnet
TRANS NPN 100V 1.2A TO226-3:Digi-Key Marketplace
NPN BIPOLAR TO-226:Master Electronics
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0A. Sourced from Process 39. See TN6717A for characteristics.:Fairchild Semiconductor

Description Value
Description Value
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