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Home  Transistors - Bipolar (BJT) - Single  2SC5706-P-E Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 100V 5A 400MHz 800mW Through Hole TP

Mar 2 2021

2SC5706-P-E Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 100V 5A 400MHz 800mW Through Hole TP

Product Overview

Image:
2SC5706-P-E
Manufacturer Part#: 2SC5706-P-E
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: ON Semiconductor
Description: Bipolar (BJT) Transistor NPN 100V 5A 400MHz 800mW Through Hole TP
Datasheet: N/A
Package: TO-251-3 Short Leads, IPak, TO-251AA
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
829: 0.30000 248.70000

2SC5706-P-E Images are for reference only.

2SC5706-P-E

CAD Models

Product Attributes

Series: -
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib Ic: 240mV @ 100mA 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 200 @ 500mA 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads IPak TO-251AA
Supplier Device Package: TP
Mfr: ON Semiconductor
Package: Bulk
Package: Bag
Base Product Number: 2SC5706

Alternative Models

ON Semiconductor 2SA2039-H
priceUSD 0.353
Power Dissipation-
hFE Min200
Collector Emitter Saturation Voltage-
Transition Frequency360 MHz
Max Collector Current5 A
Collector Emitter Breakdown Voltage50 V
PolarityPNP
Case/PackageTO-251-3
MountThrough Hole
Authorized Distributors7
ON Semiconductor BD437
priceUSD 0.155
Power Dissipation-
hFE Min30
Collector Emitter Saturation Voltage800 mV
Transition Frequency3 MHz
Max Collector Current4 A
Collector Emitter Breakdown Voltage80 V
PolarityNPN
Case/PackageTO-225
MountThrough Hole
Authorized Distributors2
ON Semiconductor KSA1242OTU
priceUSD 0.164
Power Dissipation10 W
hFE Min100
Collector Emitter Saturation Voltage-
Transition Frequency180 MHz
Max Collector Current5 A
Collector Emitter Breakdown Voltage20 V
PolarityPNP
Case/PackageTO-251-3
MountThrough Hole
Authorized Distributors2
ON Semiconductor KSA1242YTU
priceUSD 0.164
Power Dissipation10 W
hFE Min100
Collector Emitter Saturation Voltage-
Transition Frequency180 MHz
Max Collector Current5 A
Collector Emitter Breakdown Voltage20 V
PolarityPNP
Case/PackageTO-251-3
MountThrough Hole
Authorized Distributors2
ON Semiconductor KSH122ITU
priceUSD 0.819
Power Dissipation-
hFE Min1000
Collector Emitter Saturation Voltage2 V
Transition Frequency-
Max Collector Current8 A
Collector Emitter Breakdown Voltage100 V
PolarityNPN
Case/PackageTO-251-3
MountThrough Hole
Authorized Distributors1

Descriptions

Trans GP BJT NPN 50V 5A 800mW 3-Pin(3+Tab) TP:Verical
Bip Npn 5A 50V / Blkbg:Newark
TRANS NPN 100V 5A:Digi-Key

FEATURES

High-Current Switching Applications

Features

• Adoption of FBET and MBIT processes
• Large current capacitance
• Low collector-to-emitter saturation voltage
• High-speed switching
• High allowable power dissipation

Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.21.0075
RoHS Status: Not applicable

Documents & Media

Environmental Information: Material Declaration 2SC5706-P-E
PCN Obsolescence/ EOL: Mult Dev EOL 17/Apr/2019

Product Manufacturer

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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2SC5706-P-E
Bipolar (BJT) Transistor NPN 100V 5A 400MHz 800mW Through Hole TP
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 100V
Vce Saturation (Max) @ Ib Ic: 240mV @ 100mA 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 200 @ 500mA 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: -
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads IPak TO-251AA
Supplier Device Package: TP
Mfr: ON Semiconductor
Package: Bulk
Package: Bag
Base Product Number: 2SC5706

Trans GP BJT NPN 50V 5A 800mW 3-Pin(3+Tab) TP:Verical
Bip Npn 5A 50V / Blkbg:Newark
TRANS NPN 100V 5A:Digi-Key

FEATURES

High-Current Switching Applications

Features

• Adoption of FBET and MBIT processes
• Large current capacitance
• Low collector-to-emitter saturation voltage
• High-speed switching
• High allowable power dissipation

Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

There is no relevant information available for this part yet.