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Home  Transistors - Bipolar (BJT) - Single  2SC5706-H Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP

Mar 2 2021

2SC5706-H Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP

Product Overview

Image:
2SC5706-H
Manufacturer Part#: 2SC5706-H
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: ON Semiconductor
Description: Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP
Datasheet: 2SA2039,2SC5706
Package: TO-251-3 Short Leads, IPak, TO-251AA
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

2SC5706-H Images are for reference only.

2SC5706-H

CAD Models

Footprint

2SC5706-H  Footprint

Symbol

2SC5706-H  Symbol

Product Attributes

Series: -
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib Ic: 240mV @ 100mA 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 200 @ 500mA 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads IPak TO-251AA
Supplier Device Package: TP
Mfr: ON Semiconductor
Package: Bulk
Base Product Number: 2SC5706

Alternative Models

ON Semiconductor 2SC5707-E
priceUSD 0.326
Power Dissipation1 W
hFE Min200
Collector Emitter Saturation Voltage110 mV
Transition Frequency330 MHz
Max Collector Current8 A
Collector Emitter Breakdown Voltage50 V
PolarityNPN
Case/PackageTO-251
Mount-
Authorized Distributors12
ON Semiconductor 2SD1802S-TL-E
priceUSD 0.187
Power Dissipation1 W
hFE Min140
Collector Emitter Saturation Voltage190 µV
Transition Frequency150 MHz
Max Collector Current3 A
Collector Emitter Breakdown Voltage50 V
PolarityNPN
Case/PackageTO-251
Mount-
Authorized Distributors10
ON Semiconductor 2SD1802T-TL-E
priceUSD 0.242
Power Dissipation-
hFE Min200
Collector Emitter Saturation Voltage190 µV
Transition Frequency150 MHz
Max Collector Current3 A
Collector Emitter Breakdown Voltage50 V
PolarityNPN
Case/PackageTO-251
Mount-
Authorized Distributors10
ON Semiconductor 2SD1815T-TL-E
priceUSD 0.441
Power Dissipation-
hFE Min-
Collector Emitter Saturation Voltage400 mV
Transition Frequency180 MHz
Max Collector Current3 A
Collector Emitter Breakdown Voltage100 V
PolarityNPN
Case/PackageTO-251
Mount-
Authorized Distributors9
Diodes Inc. APT13003DI-G1
priceUSD 0.148
Power Dissipation-
hFE Min-
Collector Emitter Saturation Voltage300 mV
Transition Frequency4 MHz
Max Collector Current1.5 A
Collector Emitter Breakdown Voltage450 V
PolarityNPN
Case/PackageTO-251
MountThrough Hole
Authorized Distributors1

Descriptions

There is no relevant information available for this part yet.

FEATURES

High-Current Switching Applications

Features

• Adoption of FBET and MBIT processes
• Large current capacitance
• Low collector-to-emitter saturation voltage
• High-speed switching
• High allowable power dissipation

Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

Environmental & Export Classifications

Description Value
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.21.0075

Documents & Media

Datasheets: 2SA2039,2SC5706
PCN Obsolescence/ EOL: 1Q2018 Product EOL 31/Mar/2018
HTML Datasheet: 2SA2039/2SC5706

Product Manufacturer

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Popularity by Region

  • 1. Taiwan
    100
  • 2. Luxembourg
    92
  • 3. Sweden
    91
  • 4. Tunisia
    82
  • 5. Bahrain
    82
  • 6. Puerto Rico
    82
  • 7. Singapore
    82
  • 8. Malawi
    81
  • 9. Japan
    81
  • 10. Dominican Republic
    81
  • 11. Italy
    81
  • 12. Latvia
    81
  • 13. Chile
    80
  • 14. Cambodia
    79
  • 15. Russia
    79
  • 16. Venezuela
    79
  • 17. Saint Helena, Ascension and Tristan da Cunha
    79
  • 18. Madagascar
    78
  • 19. Hong Kong
    78
  • 20. Spain
    78
  • 21. Jordan
    78
  • 22. Ukraine
    77
  • 23. Mauritania
    77
  • 24. Rwanda
    77
  • 25. Thailand
    77
  • 26. Benin
    76
  • 27. Estonia
    76
  • 28. Moldova
    76
  • 29. Algeria
    76
  • 30. Mali
    76
  • 31. Brazil
    76
  • 32. Burkina Faso
    76
  • 33. Iraq
    76
  • 34. Denmark
    76
  • 35. Senegal
    76
  • 36. Vietnam
    76
  • 37. Turkey
    76
  • 38. France
    76
  • 39. Kazakhstan
    76
  • 40. Romania
    76
  • 41. Malta
    75
  • 42. Poland
    75
  • 43. Morocco
    75
  • 44. Bulgaria
    75
  • 45. Laos
    75
  • 46. Germany
    74
  • 47. New Zealand
    74
  • 48. Switzerland
    74
  • 49. Indonesia
    74
  • 50. Saudi Arabia
    74
  • 51. South Africa
    74
  • 52. Ghana
    74
  • 53. Serbia
    74
  • 54. Egypt
    74
  • 55. Haiti
    73
  • 56. Equatorial Guinea
    73
  • 57. Argentina
    73
  • 58. Belarus
    73
  • 59. Sri Lanka
    73
  • 60. Malaysia
    73
  • 61. Hungary
    73
  • 62. Philippines
    73
  • 63. Mexico
    73
  • 64. Djibouti
    72
  • 65. Australia
    72
  • 66. South Korea
    72
  • 67. Czech Republic
    72
  • 68. Peru
    72
  • 69. Myanmar
    72
  • 70. Israel
    71
  • 71. Colombia
    71
  • 72. Portugal
    71
  • 73. Finland
    71
  • 74. Netherlands
    71
  • 75. Canada
    71
  • 76. Burundi
    71
  • 77. Mauritius
    71
  • 78. Namibia
    71
  • 79. Nigeria
    71
  • 80. Togo
    70
  • 81. Slovenia
    70
  • 82. Greece
    70
  • 83. Bosnia and Herzegovina
    70
  • 84. Democratic Republic of the Congo
    70
  • 85. Ecuador
    70
  • 86. Lesotho
    70
  • 87. Tanzania
    70
  • 88. Kenya
    69
  • 89. Gambia
    69
  • 90. Angola
    68
  • 91. Ivory Coast
    68
  • 92. Cameroon
    68
  • 93. Gabon
    68
  • 94. Guinea
    68
  • 95. Marshall Islands
    68
  • 96. Mozambique
    68
  • 97. Seychelles
    68
  • 98. China
    68
  • 99. Belgium
    68
  • 100. Iceland
    68
  • 101. Mongolia
    68
  • 102. Palestinian Territory
    68
  • 103. Reunion
    68
  • 104. Northern Mariana Islands
    67
  • 105. Nepal
    67
  • 106. Honduras
    67
  • 107. United Arab Emirates
    67
  • 108. Armenia
    67
  • 109. Bolivia
    67
  • 110. Georgia
    67
  • 111. Pakistan
    67
  • 112. United States
    67
  • 113. Ethiopia
    67
  • 114. Kuwait
    66
  • 115. Bangladesh
    66
  • 116. Congo
    66
  • 117. Niger
    66
  • 118. Sierra Leone
    66
  • 119. Zambia
    66
  • 120. Zimbabwe
    66
  • 121. Norway
    65
  • 122. India
    63
  • 123. United Kingdom
    58
  • 124. Croatia
    55

2SC5706-H Popularity by Region

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2SC5706-H
Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib Ic: 240mV @ 100mA 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 200 @ 500mA 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads IPak TO-251AA
Supplier Device Package: TP
Mfr: ON Semiconductor
Package: Bulk
Base Product Number: 2SC5706

There is no relevant information available for this part yet.

FEATURES

High-Current Switching Applications

Features

• Adoption of FBET and MBIT processes
• Large current capacitance
• Low collector-to-emitter saturation voltage
• High-speed switching
• High allowable power dissipation

Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

Footprint

2SC5706-H  Footprint

Symbol

2SC5706-H  Symbol