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Home  Transistors - Bipolar (BJT) - Single  2SC5706-E Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP

Mar 2 2021

2SC5706-E Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP

Product Overview

Image:
2SC5706-E
Manufacturer Part#: 2SC5706-E
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: ON Semiconductor
Description: Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP
Datasheet: 2SA2039/2SC5706
Package: TO-251-3 Short Leads, IPak, TO-251AA
Minimum: 1
Lead Time: 2 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 0.74000 0.74000
10: 0.64800 6.48000
25: 0.60880 15.22000
100: 0.44190 44.19000
500: 0.36924 184.62000
1000: 0.31424 314.24000
2500: 0.29460 736.50000
5000: 0.26514 1325.70000

2SC5706-E Images are for reference only.

2SC5706-E

CAD Models

Product Attributes

Series: -
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib Ic: 240mV @ 100mA 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 200 @ 500mA 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads IPak TO-251AA
Supplier Device Package: TP
Mfr: ON Semiconductor
Package: Bulk
Base Product Number: 2SC5706

Descriptions

There is no relevant information available for this part yet.

FEATURES

High-Current Switching Applications

Features

• Adoption of FBET and MBIT processes
• Large current capacitance
• Low collector-to-emitter saturation voltage
• High-speed switching
• High allowable power dissipation

Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.21.0075

Documents & Media

Datasheets: 2SA2039/2SC5706
Environmental Information: Material Declaration 2SC5706-E
HTML Datasheet: 2SA2039/2SC5706

Product Manufacturer

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

Popularity by Region

  • 1. Chile
    100
  • 2. Luxembourg
    89
  • 3. Sweden
    88
  • 4. Italy
    86
  • 5. Tunisia
    79
  • 6. Bahrain
    79
  • 7. Puerto Rico
    79
  • 8. Singapore
    79
  • 9. Malawi
    78
  • 10. Dominican Republic
    78
  • 11. Latvia
    78
  • 12. Belarus
    78
  • 13. United Arab Emirates
    77
  • 14. Russia
    76
  • 15. Venezuela
    76
  • 16. Saint Helena, Ascension and Tristan da Cunha
    76
  • 17. Ethiopia
    76
  • 18. Madagascar
    75
  • 19. Hong Kong
    75
  • 20. Spain
    75
  • 21. Ukraine
    74
  • 22. Mauritania
    74
  • 23. Sri Lanka
    74
  • 24. Thailand
    74
  • 25. Benin
    74
  • 26. Estonia
    74
  • 27. Moldova
    74
  • 28. Algeria
    74
  • 29. Mali
    74
  • 30. Brazil
    74
  • 31. Burkina Faso
    73
  • 32. Iraq
    73
  • 33. Denmark
    73
  • 34. Senegal
    73
  • 35. Vietnam
    73
  • 36. Turkey
    73
  • 37. Kazakhstan
    73
  • 38. Romania
    73
  • 39. Malta
    73
  • 40. Poland
    72
  • 41. Morocco
    72
  • 42. Bulgaria
    72
  • 43. Armenia
    72
  • 44. Laos
    72
  • 45. Cambodia
    72
  • 46. Germany
    72
  • 47. New Zealand
    72
  • 48. Switzerland
    72
  • 49. Indonesia
    72
  • 50. Saudi Arabia
    72
  • 51. South Africa
    71
  • 52. Canada
    71
  • 53. Ghana
    71
  • 54. Serbia
    71
  • 55. Haiti
    71
  • 56. Equatorial Guinea
    71
  • 57. Argentina
    70
  • 58. Malaysia
    70
  • 59. Hungary
    70
  • 60. Philippines
    70
  • 61. Mexico
    70
  • 62. Djibouti
    70
  • 63. France
    70
  • 64. South Korea
    69
  • 65. Czech Republic
    69
  • 66. Myanmar
    69
  • 67. Japan
    69
  • 68. Israel
    69
  • 69. Taiwan
    69
  • 70. Colombia
    69
  • 71. Portugal
    68
  • 72. Finland
    68
  • 73. Netherlands
    68
  • 74. Burundi
    68
  • 75. Mauritius
    68
  • 76. Namibia
    68
  • 77. Nigeria
    68
  • 78. Togo
    68
  • 79. Slovenia
    68
  • 80. Jordan
    68
  • 81. Greece
    68
  • 82. Bosnia and Herzegovina
    67
  • 83. Egypt
    67
  • 84. Democratic Republic of the Congo
    67
  • 85. Ecuador
    67
  • 86. Georgia
    67
  • 87. Lesotho
    67
  • 88. Peru
    67
  • 89. Palestinian Territory
    67
  • 90. Tanzania
    67
  • 91. Kenya
    67
  • 92. Nicaragua
    67
  • 93. China
    66
  • 94. Gambia
    66
  • 95. Angola
    65
  • 96. Ivory Coast
    65
  • 97. Cameroon
    65
  • 98. Gabon
    65
  • 99. Guinea
    65
  • 100. Marshall Islands
    65
  • 101. Mozambique
    65
  • 102. Seychelles
    65
  • 103. Belgium
    65
  • 104. Iceland
    65
  • 105. Mongolia
    65
  • 106. Reunion
    65
  • 107. Northern Mariana Islands
    65
  • 108. Nepal
    65
  • 109. Australia
    65
  • 110. Honduras
    64
  • 111. Pakistan
    64
  • 112. United States
    64
  • 113. Kuwait
    64
  • 114. India
    64
  • 115. Bangladesh
    64
  • 116. Congo
    64
  • 117. Niger
    64
  • 118. Sierra Leone
    64
  • 119. Zambia
    64
  • 120. Zimbabwe
    64
  • 121. Norway
    62
  • 122. United Kingdom
    56
  • 123. Croatia
    53

2SC5706-E Popularity by Region

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2SC5706-E
Bipolar (BJT) Transistor NPN 50V 5A 400MHz 800mW Through Hole TP
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib Ic: 240mV @ 100mA 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 200 @ 500mA 2V
Power - Max: 800mW
Frequency - Transition: 400MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads IPak TO-251AA
Supplier Device Package: TP
Mfr: ON Semiconductor
Package: Bulk
Base Product Number: 2SC5706

There is no relevant information available for this part yet.

FEATURES

High-Current Switching Applications

Features

• Adoption of FBET and MBIT processes
• Large current capacitance
• Low collector-to-emitter saturation voltage
• High-speed switching
• High allowable power dissipation

Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

There is no relevant information available for this part yet.