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Home  Transistors - Bipolar (BJT) - Single  2N6520TA Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 625mW Through Hole TO-92-3

Mar 2 2021

2N6520TA Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 625mW Through Hole TO-92-3

Product Overview

Image:
2N6520TA
Manufacturer Part#: 2N6520TA
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: ON Semiconductor
Description: Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 625mW Through Hole TO-92-3
Datasheet: 2N6515,17,20
Package: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Minimum: 1
Lead Time: 26 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 0.33000 0.33000
10: 0.22900 2.29000
25: 0.22880 5.72000
100: 0.11180 11.18000
500: 0.09322 46.61000
1000: 0.06477 64.77000
2000: 0.05614 112.28000
6000: 0.05207 312.42000
10000: 0.04318 431.80000
50000: 0.03810 1905.00000

2N6520TA Images are for reference only.

2N6520TA

CAD Models

Product Attributes

Series: -
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib Ic: 1V @ 5mA 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 20 @ 50mA 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3 TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Mfr: ON Semiconductor
Package: Cut Tape (CT)Tape & Box (TB)
Base Product Number: 2N6520

Alternative Models

ON Semiconductor 2N4403G
price-
Power Dissipation30
hFE Min750 mV
Collector Emitter Saturation Voltage200 MHz
Transition Frequency600 mA
Max Collector Current40 V
Collector Emitter Breakdown VoltagePNP
PolarityTO-92
Case/PackageThrough Hole
Mount1
ON Semiconductor 2N4403RLRAG
priceUSD 0.019
Power Dissipation625 mW
hFE Min30
Collector Emitter Saturation Voltage750 mV
Transition Frequency200 MHz
Max Collector Current600 mA
Collector Emitter Breakdown Voltage40 V
PolarityPNP
Case/PackageTO-92
MountThrough Hole
Authorized Distributors2
ON Semiconductor 2N6518TA
priceUSD 0.048
Power Dissipation625 mW
hFE Min50
Collector Emitter Saturation Voltage-
Transition Frequency200 MHz
Max Collector Current500 mA
Collector Emitter Breakdown Voltage250 V
PolarityPNP
Case/PackageTO-92
MountThrough Hole
Authorized Distributors2
ON Semiconductor PN200
priceUSD 0.048
Power Dissipation625 mW
hFE Min100
Collector Emitter Saturation Voltage-
Transition Frequency250 MHz
Max Collector Current500 mA
Collector Emitter Breakdown Voltage45 V
PolarityPNP
Case/PackageTO-92
MountThrough Hole
Authorized Distributors3

Descriptions

There is no relevant information available for this part yet.

FEATURES

Features

• High Voltage Transistor
• Collector-Emitter Voltage: VCBO= -350V
• Collector Dissipation: PC (max)=625mW
• Complement to 2N6517

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.21.0075

Documents & Media

Datasheets: 2N6515,17,20
Environmental Information: Material Declaration 2N6520TA
PCN Design/Specification: Copper Lead Frame 12/Oct/2007
PCN Assembly/Origin: Logo 17/Aug/2017
PCN Packaging: Mult Dev Assembly Chgs 17/Nov/2020

Product Manufacturer

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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2N6520TA Popularity by Region

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2N6520TA
Bipolar (BJT) Transistor PNP 350V 500mA 200MHz 625mW Through Hole TO-92-3
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Active
Transistor Type: PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 350V
Vce Saturation (Max) @ Ib Ic: 1V @ 5mA 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 20 @ 50mA 10V
Power - Max: 625mW
Frequency - Transition: 200MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3 TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package: TO-92-3
Mfr: ON Semiconductor
Package: Cut Tape (CT)Tape & Box (TB)
Base Product Number: 2N6520

There is no relevant information available for this part yet.

FEATURES

Features

• High Voltage Transistor
• Collector-Emitter Voltage: VCBO= -350V
• Collector Dissipation: PC (max)=625mW
• Complement to 2N6517

There is no relevant information available for this part yet.