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Home  Transistors - Bipolar (BJT) - Single  2N5086BU Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor PNP 50V 100mA 40MHz 625mW Through Hole TO-92-3

Mar 2 2021

2N5086BU Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor PNP 50V 100mA 40MHz 625mW Through Hole TO-92-3

Product Overview

Image:
2N5086BU
Manufacturer Part#: 2N5086BU
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: ON Semiconductor
Description: Bipolar (BJT) Transistor PNP 50V 100mA 40MHz 625mW Through Hole TO-92-3
Datasheet: 2N5086, 2N5087, MMBT5087
Package: TO-226-3, TO-92-3 (TO-226AA)
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
12020: 0.02000 240.40000

2N5086BU Images are for reference only.

2N5086BU

CAD Models

Product Attributes

Series: -
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib Ic: 300mV @ 1mA 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic Vce: 150 @ 100µA 5V
Power - Max: 625mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3 TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mfr: ON Semiconductor
Package: Bulk
Base Product Number: 2N5086

Descriptions

There is no relevant information available for this part yet.

FEATURES

PNP General Purpose Amplifier

This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

Environmental & Export Classifications

Description Value
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.21.0095

Documents & Media

Datasheets: 2N5086, 2N5087, MMBT5087
PCN Design/Specification: Copper Lead Frame 12/Oct/2007
HTML Datasheet: 2N5086, 2N5087, MMBT5087
Datasheets: 2N5086BU

Product Manufacturer

ON Semiconductor (Nasdaq: ON) is driving energy efficient innovations, empowering customers to reduce global energy use. The company offers a comprehensive portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications. ON Semiconductor operates a responsive, reliable, world-class supply chain and quality program, and a network of manufacturing facilities, sales offices and design centers in key markets throughout North America, Europe, and the Asia Pacific regions.

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2N5086BU
Bipolar (BJT) Transistor PNP 50V 100mA 40MHz 625mW Through Hole TO-92-3
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib Ic: 300mV @ 1mA 10mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic Vce: 150 @ 100µA 5V
Power - Max: 625mW
Frequency - Transition: 40MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3 TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Mfr: ON Semiconductor
Package: Bulk
Base Product Number: 2N5086

There is no relevant information available for this part yet.

FEATURES

PNP General Purpose Amplifier

This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.

There is no relevant information available for this part yet.