FEATURES
Description:
The NTE64 is a silicon NPN high frequency transistor designed primarily for use in high–gain, low noise small–signal amplifiers and applications requiring fast switching times.
Features:
High Current Gain–Bandwidth Product: fT = 4.5GHz Typ @ IC = 15mA
Low Noise Figure: NF = 2dB Typ @ f = 1GHz
High Power Gain: Gpe = 10dB Min @ f = 1GHz
Third Order Intercept: +23dBm Typ
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . .30mA
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . 0.375W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.3mW/°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . -65° to +150°C
Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . 300°C/W
For over 40 years, NTE Electronics, Inc. has been a leading supplier of high-quality NTE and ECG brand name electrical and electronic components. Product lines include semiconductors, relays, resistors, capacitors, cable ties and bundle management products, LED lighting, optoelectronics, potentiometers and trimmers, RF connectors, heat shrink, soldering irons, soldering stations, and heat guns, solder wick, AC/DC adapters, clips and test leads, terminals and connectors, fuses, fans, tools and hardware, wire and cable, and more.