PBRN113ET,215 Datasheets | Bipolar (BJT) - Single, Pre-Biased Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 600 mA 250 mW Surface Mount TO-236AB
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PBRN113ET,215, PBRN113ET,215 Datasheet,PBRN113ET,215 PDF,Nexperia USA Inc.
Descriptions
PBRN113E series 40 V Surface Mount NPN Small Signal Transistor - SOT-23:Future Electronics
NPN - Pre-Biased 250mW 600mA 40V SOT-23 Digital Transistors ROHS:Dasenic
Trans Digital BJT NPN 40V 700mA 3-Pin TO-236AB T/R:Avnet Europe
PBRN113ET - 40 V, 600 mA NPN PB RET; R1 = 1 kΩ, R2 = 1 kΩ:Nexperia
700 mA 40 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB:Component Stockers
Small Signal Digital (BRT) Transistor; Collector Emitter Voltage, V(br)ceo:40V; Continuous Collector Current, Ic:600mA; Base Input Resistor, R1:1kohm; Base-Emitter Resistor, R2:1kohm; Resistor Ratio, R1/R2:1 ;RoHS Compliant: Yes:Newark
TRANS NPN 0.6A 40V SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:250mW; DC Collector Current:600mA; DC Current Gain hFE:420; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:35mV; Current Ic Continuous a Max:50mA; Hfe Min:270; Package / Case:SOT-23; Power Dissipation Pd:250mW; Termination Type:SMD; Transistor Type:Low Saturation (BISS):element14 APAC