FEATURES
Description
The is a 4 Mbit (512Kb × 8 bit) Serial Paged Flash memory accessed by a high speed SPIcompatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle.
Features
■ SPI bus compatible serial interface
■ 4 Mbit Page-Erasable Flash memory
■ Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
■ SubSector Erase (4 Kbytes)
■ Sector Erase (64 Kbytes)
■ Bulk Erase (4 Mbits)
■ 2.7 V to 3.6 V single supply voltage
■ 50 MHz clock rate (maximum)
■ Deep Power-down mode 1 µA (typical)
■ Electronic Signature
– JEDEC standard two-byte signature(8013h)
■ Software Write Protection on a 64 Kbyte sector basis
■ Hardware Write Protection of the memory area selected using the BP0, BP1 and BP2 bits
■ More than 100 000 Write cycles
■ More than 20 year data retention
■ Packages
– ECOPACK® (RoHS compliant)
Micron is one of the world's leading providers of advanced semiconductor solutions. Micron's DRAM and Flash components are used in today's most advanced computing, networking, and communications products, including computers, workstations, servers, cell phones, wireless devices, digital cameras, and gaming systems.