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Jun 21 2021

DS1230Y-200+ Datasheets | Memory NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 28-EDIP

Product Overview

Image:
DS1230Y-200
Manufacturer Part#: DS1230Y-200+
Product Category: Memory
Stock: No
Manufacturer: Maxim Integrated
Description: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 28-EDIP
Datasheet: N/A
Package: 28-DIP Module (0.600", 15.24mm)
Minimum: 1
Lead Time: 10 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 27.38000 27.38000
10: 25.50100 255.01000
25: 25.22800 630.70000
50: 24.60540 1230.27000
100: 21.60000 2160.00000
250: 21.48000 5370.00000

DS1230Y-200+ Images are for reference only.

DS1230Y-200+

CAD Models

Product Attributes

Series: -
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Write Cycle Time - Word Page: 200ns
Access Time: 200 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600" 15.24mm)
Supplier Device Package: 28-EDIP
Mfr: Maxim Integrated
Package: Tube
Base Product Number: DS1230

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:DS1230Y-200+ Compare: Current Part Manufacturers:Maxim Integrated Category:RAM Memory Description: Maxim DS1230Y-200+ SRAM Memory, 256Kbit, 4.5 → 5.5V, 200ns 28Pin EDIP
Mfr.Part#:DS1230Y-200 Compare: DS1230Y-200+ VS DS1230Y-200 Manufacturers:Maxim Integrated Category:Memory Chip Description: IC NVSRAM 256Kbit 200NS 28DIP
Mfr.Part#:DS1230Y-85+ Compare: DS1230Y-200+ VS DS1230Y-85+ Manufacturers:Maxim Integrated Category:Memory Chip Description: Non-Volatile SRAM Module, 32KX8, 85ns, CMOS, 0.74INCH, ROHS COMPLIANT, DIP-28
Mfr.Part#:DS1230Y-100+ Compare: DS1230Y-200+ VS DS1230Y-100+ Manufacturers:Maxim Integrated Category:RAM Memory Description: MAXIM INTEGRATED PRODUCTS DS1230Y-100+ NVRAM, SRAM, 256Kbit, 32K x 8Bit, Parallel, 100ns, DIP

Descriptions

There is no relevant information available for this part yet.

FEATURES

DESCRIPTION

The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES

■ 10 years minimum data retention in the absence of external power
■ Data is automatically protected during power loss
■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
■ Unlimited write cycles
■ Low-power CMOS
■ Read and write access times as fast as 70 ns
■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■ Full ±10% VCC operating range (DS1230Y)
■ Optional ±5% VCC operating range (DS1230AB)
■ Optional industrial temperature range of -40°C to +85°C, designated IND
■ JEDEC standard 28-pin DIP package
■ New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver

 

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Affected
ECCN: EAR99
HTSUS: 8542.32.0041

Product Manufacturer

The market is evolving. The rules are changing. To keep your time to market short, you need integration at every level—from silicon to the supply chain. Count on Maxim Integrated to help you overcome design and architectural challenges, with integrated solutions for the industrial, medical, consumer, automotive, energy, computing, and communications realms. Maxim Integrated is also your source for power, interface, and even digital products that work in the analog world. And they’re glad to support you with reference designs, tools, technical documents, packaging, and more. We invite you to explore their latest analog integration offerings.

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DS1230Y-200
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 28-EDIP
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Write Cycle Time - Word Page: 200ns
Access Time: 200 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600" 15.24mm)
Supplier Device Package: 28-EDIP
Mfr: Maxim Integrated
Package: Tube
Base Product Number: DS1230

There is no relevant information available for this part yet.

FEATURES

DESCRIPTION

The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES

■ 10 years minimum data retention in the absence of external power
■ Data is automatically protected during power loss
■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
■ Unlimited write cycles
■ Low-power CMOS
■ Read and write access times as fast as 70 ns
■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■ Full ±10% VCC operating range (DS1230Y)
■ Optional ±5% VCC operating range (DS1230AB)
■ Optional industrial temperature range of -40°C to +85°C, designated IND
■ JEDEC standard 28-pin DIP package
■ New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver

 

There is no relevant information available for this part yet.