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Jun 21 2021

DS1230Y-120IND+ Datasheets | Memory NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 28-EDIP

Product Overview

Image:
DS1230Y-120IND
Manufacturer Part#: DS1230Y-120IND+
Product Category: Memory
Stock: No
Manufacturer: Maxim Integrated
Description: NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 28-EDIP
Datasheet: N/A
Package: 28-DIP Module (0.600", 15.24mm)
Minimum: 1
Lead Time: 6 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 26.03000 26.03000
10: 24.23700 242.37000
25: 23.97720 599.43000
50: 23.38560 1169.28000
100: 20.52910 2052.91000
250: 20.41500 5103.75000

DS1230Y-120IND+ Images are for reference only.

DS1230Y-120IND+

CAD Models

Product Attributes

Series: -
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Write Cycle Time - Word Page: 120ns
Access Time: 120 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600" 15.24mm)
Supplier Device Package: 28-EDIP
Mfr: Maxim Integrated
Package: Tube
Base Product Number: DS1230

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:DS1230Y-120IND+ Compare: Current Part Manufacturers:Maxim Integrated Category:Memory Chip Description: Non-Volatile SRAM Module, 32KX8, 120ns, CMOS, 0.74INCH, ROHS COMPLIANT, DIP-28
Mfr.Part#:DS1230Y-120IND Compare: DS1230Y-120IND+ VS DS1230Y-120IND Manufacturers:Maxim Integrated Category:Memory Chip Description: IC NVSRAM 256Kbit 120NS 28DIP
Mfr.Part#:DS1230Y-120+ Compare: DS1230Y-120IND+ VS DS1230Y-120+ Manufacturers:Maxim Integrated Category:Memory Chip Description: Maxim DS1230Y-120+ NVRAM Memory, 256Kbit, 120ns, 4.5 → 5.5V 28Pin EDIP
Mfr.Part#:DS1230AB-120+ Compare: DS1230Y-120IND+ VS DS1230AB-120+ Manufacturers:Maxim Integrated Category:Memory Chip Description: Maxim DS1230AB-120+ NVRAM Memory, 256Kbit, 120ns, 4.75 → 5.25V 28Pin EDIP

Descriptions

There is no relevant information available for this part yet.

FEATURES

DESCRIPTION

The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES

■ 10 years minimum data retention in the absence of external power
■ Data is automatically protected during power loss
■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
■ Unlimited write cycles
■ Low-power CMOS
■ Read and write access times as fast as 70 ns
■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■ Full ±10% VCC operating range (DS1230Y)
■ Optional ±5% VCC operating range (DS1230AB)
■ Optional industrial temperature range of -40°C to +85°C, designated IND
■ JEDEC standard 28-pin DIP package
■ New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver

 

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8542.32.0041

Product Manufacturer

The market is evolving. The rules are changing. To keep your time to market short, you need integration at every level—from silicon to the supply chain. Count on Maxim Integrated to help you overcome design and architectural challenges, with integrated solutions for the industrial, medical, consumer, automotive, energy, computing, and communications realms. Maxim Integrated is also your source for power, interface, and even digital products that work in the analog world. And they’re glad to support you with reference designs, tools, technical documents, packaging, and more. We invite you to explore their latest analog integration offerings.

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DS1230Y-120IND
NVSRAM (Non-Volatile SRAM) Memory IC 256Kb (32K x 8) Parallel 28-EDIP
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Active
Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Write Cycle Time - Word Page: 120ns
Access Time: 120 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600" 15.24mm)
Supplier Device Package: 28-EDIP
Mfr: Maxim Integrated
Package: Tube
Base Product Number: DS1230

There is no relevant information available for this part yet.

FEATURES

DESCRIPTION

The DS1230 256k Nonvolatile SRAMs are 262,144-bit, fully static, nonvolatile SRAMs organized as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1230 devices can be used in place of existing 32k x 8 static RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230 devices in the Low Profile Module package are specifically designed for surface-mount applications. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES

■ 10 years minimum data retention in the absence of external power
■ Data is automatically protected during power loss
■ Replaces 32k x 8 volatile static RAM, EEPROM or Flash memory
■ Unlimited write cycles
■ Low-power CMOS
■ Read and write access times as fast as 70 ns
■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■ Full ±10% VCC operating range (DS1230Y)
■ Optional ±5% VCC operating range (DS1230AB)
■ Optional industrial temperature range of -40°C to +85°C, designated IND
■ JEDEC standard 28-pin DIP package
■ New PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides lithium backup battery
- Standardized pinout for all nonvolatile SRAM products
- Detachment feature on PowerCap allows easy removal using a regular screwdriver

 

There is no relevant information available for this part yet.