FEATURES
The RF Line
Microwave Long Pulse Power Transistor
Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters.
• Guaranteed Performance @ 1.215 GHz, 36 Vdc
Output Power = 120 Watts Peak
Gain = 8.0 dB Min., 9.2 dB (Typ)
• 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR
• Hermetically Sealed Industry Standard Package
• Silicon Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration
• Internal Input and Output Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MACOM designs and manufactures semiconductor products for Data Center, Telecommunication and Industrial and Defense applications. Headquartered in Lowell, Massachusetts, MACOM has design centers and sales offices throughout North America, Europe and Asia. MACOM is certified to the ISO9001 international quality standard and ISO14001 environmental management standard.
MACOM has more than 65 years of application expertise with multiple design centers, Si, GaAs and InP fabrication, manufacturing, assembly and test, and operational facilities throughout North America, Europe, and Asia.