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The QH08TZ600 is DIODE SCHOTTKY 600V 8A TO220AC, that includes Qspeed? Series, they are designed to operate with a Schottky Silicon Carbide Diodes Product, Packaging is shown on datasheet note for use in a Tube, that offers Unit Weight features such as 0.211644 oz, Mounting Style is designed to work in Through Hole, as well as the Qspeed Tradename, the device can also be used as TO-220-2 Package Case. In addition, the Technology is SiC, the device is offered in Through Hole Mounting Type, the device has a TO-220AC of Supplier Device Package, and Configuration is Single, and the Speed is Fast Recovery = 200mA (Io), and Diode Type is Schottky, and the Current Reverse Leakage Vr is 250μA @ 600V, and Voltage Forward Vf Max If is 3.15V @ 8A, and the Voltage DC Reverse Vr Max is 600V, and Current Average Rectified Io is 8A, and the Reverse Recovery Time trr is 11.1ns, and Capacitance Vr F is 25pF @ 10V, 1MHz, it has an Operating Temperature Junction range of 150°C (Max), and Pd Power Dissipation is 44.6 W, it has an Maximum Operating Temperature range of + 150 C, it has an Minimum Operating Temperature range of - 55 C, and the Vf Forward Voltage is 2.6 V, and Ir Reverse Current is 250 uA, and the If Forward Current is 8 A, and Vrrm Repetitive Reverse Voltage is 600 V, and the Ifsm Forward Surge Current is 350 A, and trr Reverse Recovery time is 11.1 ns.
The QH05TZ600 is DIODE SCHOTTKY 600V 5A TO220AC, that includes 600 V Vrrm Repetitive Reverse Voltage, they are designed to operate with a 3.1V @ 5A Voltage Forward Vf Max If, Voltage DC Reverse Vr Max is shown on datasheet note for use in a 600V, that offers Vf Forward Voltage features such as 2.6 V, Unit Weight is designed to work in 0.211644 oz, as well as the 10 ns trr Reverse Recovery time, the device can also be used as Qspeed Tradename. In addition, the Technology is SiC, the device is offered in TO-220AC Supplier Device Package, the device has a Fast Recovery = 200mA (Io) of Speed, and Series is Qspeed?, and the Reverse Recovery Time trr is 10ns, and Product is Schottky Silicon Carbide Diodes, and the Pd Power Dissipation is 36.8 W, and Packaging is Tube, and the Package Case is TO-220-2, it has an Operating Temperature Junction range of 150°C (Max), and the Mounting Style is Through Hole, and Mounting Type is Through Hole, it has an Minimum Operating Temperature range of - 55 C, it has an Maximum Operating Temperature range of + 150 C, and the Ir Reverse Current is 250 uA, and Ifsm Forward Surge Current is 350 A, and the If Forward Current is 5 A, and Diode Type is Schottky, and the Current Reverse Leakage Vr is 250μA @ 600V, and Current Average Rectified Io is 5A, and the Configuration is Single, and Capacitance Vr F is 17pF @ 10V, 1MHz.
QH08BZ600 with circuit diagram, that includes 25pF @ 10V, 1MHz Capacitance Vr F, they are designed to operate with a 8A Current Average Rectified Io, Current Reverse Leakage Vr is shown on datasheet note for use in a 250μA @ 600V, that offers Diode Type features such as Schottky, Mounting Type is designed to work in Surface Mount, it has an Operating Temperature Junction range of 150°C (Max), the device can also be used as TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package Case. In addition, the Packaging is Tape & Reel (TR), the device is offered in 11.1ns Reverse Recovery Time trr, the device has a Qspeed? of Series, and Speed is Fast Recovery = 200mA (Io), and the Supplier Device Package is TO-263AB, and Voltage DC Reverse Vr Max is 600V, and the Voltage Forward Vf Max If is 3.15V @ 8A.
QH05BZ600 with EDA / CAD Models, that includes TO-263AB Supplier Device Package, they are designed to operate with a TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Package Case, Packaging is shown on datasheet note for use in a Tape & Reel (TR), that offers Mounting Type features such as Surface Mount, Diode Type is designed to work in Schottky, as well as the Qspeed? Series, the device can also be used as Fast Recovery = 200mA (Io) Speed. In addition, the Voltage DC Reverse Vr Max is 600V, the device is offered in 5A Current Average Rectified Io, the device has a 3.1V @ 5A of Voltage Forward Vf Max If, and Current Reverse Leakage Vr is 250μA @ 600V, and the Capacitance Vr F is 17pF @ 10V, 1MHz, it has an Operating Temperature Junction range of 150°C (Max), and the Reverse Recovery Time trr is 10ns.