FF600R12KE4BOSA1 Datasheets | IGBTs - Modules IGBT Module Trench Field Stop Half Bridge 1200 V 600 A Chassis Mount Module
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FF600R12KE4BOSA1, FF600R12KE4BOSA1 Datasheet,FF600R12KE4BOSA1 PDF,Infineon Technologies
Descriptions
Trans IGBT Module N-CH 1200V 600A Automotive 7-Pin 62MM-1 Tray:Verical
IGBT MOD, N-CH, 1.2KV, 600A, 150DEG C; Continuous Collector Current:600A; Collector Emitter Saturation Voltage:1.75V; Power Dissipation:-; Operating Temperature Max:150°C; IGBT Termination:Tab; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes:Newark
IGBT MODULE, N-CH, 1.2KV, 600A; Transistor Polarity: N Channel; DC Collector Current: 600A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: -; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: Module; No. of Pins: -; Operating Temperature Max: 150°C; Product Range: 62mm C-Series; SVHC: No SVHC (27-Jun-2018):Farnell
Our well-known 62 mm 1200V dual IGBT modules with trench/fieldstop IGBT4 and Emitter Controlled Diode are the right choice for your design. | Summary of Features: 600A / 1200V; T vj op = 150C; RoHS compliant; 4 kV AC 1 min Insulation; Package with CTI > 400; High Creepage and Clearance Distances; UL/CSA Certification with UL1557 E83336 | Benefits: Existing packages with higher current capability, allows to increase inverter output power with same frame size; Highest power density; Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; ups:Infineon