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Home  Transistors - Bipolar (BJT) - Single  2N3715 PBFREE Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 60V 10A 4MHz 150W Through Hole TO-3

Mar 2 2021

2N3715 PBFREE Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 60V 10A 4MHz 150W Through Hole TO-3

Product Overview

Image:
2N3715-PBFREE
Manufacturer Part#: 2N3715 PBFREE
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: Central Semiconductor Corp
Description: Bipolar (BJT) Transistor NPN 60V 10A 4MHz 150W Through Hole TO-3
Datasheet: 2N3713 thru 2N3716
Package: TO-204AA, TO-3
Minimum: 1
Lead Time: 22 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 6.28000 6.28000
10: 5.38600 53.86000
25: 5.01600 125.40000
100: 4.48800 448.80000
500: 3.96000 1980.00000
1000: 3.56400 3564.00000
2500: 3.33960 8349.00000
5000: 3.24720 16236.00000

2N3715 PBFREE Images are for reference only.

2N3715 PBFREE

CAD Models

Product Attributes

Series: -
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib Ic: 800mV @ 500mA 5A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic Vce: 50 @ 1A 2V
Power - Max: 150W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA TO-3
Supplier Device Package: TO-3
Mfr: Central Semiconductor Corp
Package: Tube

Descriptions

There is no relevant information available for this part yet.

FEATURES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications.

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095

Documents & Media

Datasheets: 2N3713 thru 2N3716
Environmental Information: RoHS3 Cert

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2N3715-PBFREE
Bipolar (BJT) Transistor NPN 60V 10A 4MHz 150W Through Hole TO-3
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Series: -
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 10A
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib Ic: 800mV @ 500mA 5A
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic Vce: 50 @ 1A 2V
Power - Max: 150W
Frequency - Transition: 4MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AA TO-3
Supplier Device Package: TO-3
Mfr: Central Semiconductor Corp
Package: Tube

There is no relevant information available for this part yet.

FEATURES

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3713, 2N3714, 2N3715, and 2N3716 are silicon NPN power transistors manufactured by the epitaxial-base process, mounted in a hermetically sealed metal package designed for medium speed switching and amplifier applications.

There is no relevant information available for this part yet.