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BT136S-600E,118 Datasheets | Thyristors - TRIACs TRIAC Logic - Sensitive Gate 600V 4A Surface Mount DPAK

By apogeeweb, BT136S-600E,118, BT136S-600E,118 Datasheet,BT136S-600E,118 PDF,WeEn Semiconductors

Product Overview

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BT136S-600E-118
Manufacturer Part#: BT136S-600E,118
Product Category: Thyristors - TRIACs
Stock: On Order
Manufacturer: WeEn Semiconductors
Description: TRIAC Logic - Sensitive Gate 600V 4A Surface Mount DPAK
Datasheet: BT136S-600E
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Minimum: 1
Quantity: On Order

CAD Models

Product Attributes

Product Attributes Attrinute Value   Search Similar
Mfr: WeEn Semiconductors
Base Product Number: BT136
Operating Temperature: 125°C (TJ)
Supplier Device Package: DPAK
Triac Type: Logic - Sensitive Gate
Current - Non Rep. Surge 50 60Hz (Itsm): 25A 27A
Configuration: Single
Voltage - Off State: 600V
Current - On State (It (RMS)) (Max): 4A
Current - Hold (Ih) (Max): 15mA
Package / Case:
RD91-3 (Insulated)
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Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:BT136S-600E,118 Compare: Current Part Manufacturers:Nxp Category:TRIAC Diodes Description: Thyristor triac 600v 27a 3pin(2+tab) dpak t/r
Mfr.Part#:BTA204S-600D,118 Compare: BT136S-600E,118 VS BTA204S-600D,118 Manufacturers:Nxp Category:TRIAC Diodes Description: Nxp bta204s-600d,118 triac, 600v, 4a, sot-428, 5ma, 1.5v, 5w
Mfr.Part#:MAC4DHMT4G Compare: BT136S-600E,118 VS MAC4DHMT4G Manufacturers:On semiconductor Category:TRIAC Diodes Description: On semiconductor mac4dhmt4g triac, 600v, 4a, to-252, 10ma, 1.3v, 2w
Mfr.Part#:MAC4DLMT4G Compare: BT136S-600E,118 VS MAC4DLMT4G Manufacturers:On semiconductor Category:TRIAC Diodes Description: Mac4dlmt4g , triac, 600v 4a, gate trigger 1.3v 5ma, 3pin dpak
  • Features
  • Product Manufacturer

FEATURES

GENERAL DESCRIPTION

Glass passivated, sensitive gate triacs in a plastic envelope, suitable for surface mounting, intended for use
in general purpose bidirectional switching and phase control applications, where high sensitivity is
required in all four quadrants.

WeEn Semiconductors Co., Ltd, is the global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital). WeEn Semiconductors was officially opened on 19th January, 2016 with the business and operations center located in Shanghai, China. WeEn Semiconductors is registered at Nanchang city which is the capital city of Jiangxi province, China. It fully owns subsidiaries and branches in Jilin city for bipolar production, in Shanghai and the United Kingdom for R&D and production support, in Hong Kong for Sales activities, and in many other countries for sales and customer services, respectively. As a key player in the semiconductors industry, WeEn combines the advanced bipolar power technology and the strong resource of JAC Capital in Chinese manufacturing industry and distribution channels, to focus on developing a complete portfolio of industry-leading bipolar power products including silicon controlled rectifiers, power diodes, high voltage transistors, silicon carbide which are widely used in the automotive, telecommunications, computers and consumer electronics, intelligent home appliances, lighting, and power management markets. The aim is to help the customers achieve higher cost-efficiency and production efficiency and to contribute to the development of China and global intelligent manufacturing. The NXP Bi-Polar Division product portfolio (Diodes, Thyristors & Transistors) has been transferred to WeEn Semiconductors (Jan 19, 2017).

  • Environmental & Export Classifications
  • Documents & Media
Description Value
Description Value
RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.30.0080
Documents Media
Datasheets: BT136S-600E
PCN Assembly/Origin: Mult Dev Assembly Trsf 21/Mar/2018
PCN Packaging: All Device Label Chg 14/Feb/2020
PCN Other: Joint Venture Revision 07/Aug/2015
PCN Part Status Change: Part Status Conversion 22/Nov/2015
HTML Datasheet: BT136S-600E

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