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Home  Transistors - FETs, MOSFETs - Single  2N7002K-T1-GE3 Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount TO-236

Jan 5 2021

2N7002K-T1-GE3 Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount TO-236

Product Overview

Image:
2N7002K-T1-GE3
Manufacturer Part#: 2N7002K-T1-GE3
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: Vishay Siliconix
Description: N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount TO-236
Datasheet: N/A
Package: TO-236-3, SC-59, SOT-23-3
Minimum: 1
Lead Time: 52 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 0.22000 0.22000
10: 0.18000 1.80000
25: 0.15040 3.76000
100: 0.07350 7.35000
500: 0.06128 30.64000
1000: 0.04259 42.59000
3000: 0.03958 118.74000
6000: 0.03424 205.44000
9000: 0.02839 255.51000
30000: 0.02789 836.70000
75000: 0.02505 1878.75000

2N7002K-T1-GE3 Images are for reference only.

2N7002K-T1-GE3

CAD Models

Footprint

2N7002K-T1-GE3  Footprint

Symbol

2N7002K-T1-GE3  Symbol

Product Attributes

Package / Case: TO-236-3 SC-59 SOT-23-3
Series: TrenchFET®
Mfr: Vishay Siliconix
Base Product Number: 2N7002
Supplier Device Package: TO-236
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On Min Rds On): 4.5V 10V
Rds On (Max) @ Id Vgs: 2Ohm @ 500mA 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Vgs (Max): ±20V
FET Feature: -
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:2N7002K-T1-GE3 Compare: Current Part Manufacturers:Vishay Semiconductor Category:MOSFETs Description: MOSFET 60V 300mA 0.35W 2Ω @ 10V
Mfr.Part#:2N7002K-T1-E3 Compare: 2N7002K-T1-GE3 VS 2N7002K-T1-E3 Manufacturers:Vishay Semiconductor Category:MOSFETs Description: MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 2Ω; ID 300mA; TO-236 (SOT-23); PD 0.35W
Mfr.Part#:2N7002KT1G Compare: 2N7002K-T1-GE3 VS 2N7002KT1G Manufacturers:ON Semiconductor Category:MOSFETs Description: SOT-23 N-CH 60V 0.38A
Mfr.Part#:2N7002WT1G Compare: 2N7002K-T1-GE3 VS 2N7002WT1G Manufacturers:ON Semiconductor Category:MOSFETs Description: SC-70 N-CH 60V 0.31A

Descriptions

2N7002K-T1-GE3 N-channel MOSFET Transistor; 0.3 A; 60 V; 3-Pin SOT-23:Allied Electronics & Automation
2N7002K Series N-Channel 60 V 2 Ohm 0.6 nC MosFet Surface Mount - SOT-23-3:Future Electronics
Trans MOSFET N-CH Si 60V 0.3A 3-Pin SOT-23 T/R:Verical
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236:ComS.I.T. Europe - USA - Asia
MOSFET, N-CH, 60V, 0.3A, SOT23; Transistor Polarity:N Channel; Max Current Id:300mA; Max Voltage Vds:60V; On State Resistance:2ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:350mW; Operating Temperature ;RoHS Compliant: Yes:Newark

FEATURES

DESCRIPTION

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

CHARACTERISTICS

• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.21.0095

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2N7002K-T1-GE3 2N7002K-T1-GE3 Vishay Siliconix N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount TO-236 On Order

1:$$0.22000

10:$$0.18000

25:$$0.15040

100:$$0.07350

500:$$0.06128

1,000:$$0.04259

3,000:$$0.03958

6,000:$$0.03424

9,000:$$0.02839

30,000:$$0.02789

75,000:$$0.02505

2N7002K-T1-GE3 2N7002K-T1-GE3 Vishay 2N7002K-T1-GE3 N-channel MOSFET Transistor; 0.3 A; 60 V; 3-Pin SOT-23:Allied Electronics & Automatio

View All


2N7002K Series N-Channel 60 V 2 Ohm 0.6 nC MosFet Surface Mount - SOT-23-3:Future Electronics
Trans MOSFET N-CH Si 60V 0.3A 3-Pin SOT-23 T/R:Verical
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236:ComS.I.T. Europe - USA - Asia
MOSFET, N-CH, 60V, 0.3A, SOT23; Transistor Polarity:N Channel; Max Current Id:300mA; Max Voltage Vds:60V; On State Resistance:2ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:350mW; Operating Temperature ;RoHS Compliant: Yes:Newark

On Order

1:$0.051

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FAQ:

what is 2n7002?

The 2N7002 is a low voltage, low current Logic Level N-channel MOSFET. Because of its low on-state resistance and low input capacitance it is used in power management applications. The MOSFET can be easily controlled by 3.3V or 5V system voltage since it has low threshold voltage.

What is an N channel Mosfet?

A N-Channel MOSFET is a type of MOSFET in which the channel of the MOSFET is composed of a majority of electrons as current carriers. ... An enhancement-type MOSFET is the opposite. It is normally off when the gate-source voltage is 0 (VGS=0).

How does AP Channel Connect to Mosfet?

To turn on a P-Channel Enhancement-type MOSFET, apply a positive voltage VS to the source of the MOSFET and apply a negative voltage to the gate terminal of the MOSFET (the gate must be sufficiently more negative than the threshold voltage across the drain-source region (VG DS).

Related Articles

Introduction to 2N7002: N Channel Logic Level MOSFET

Billily 3 Dec 2020  694

DescriptionThe 2N7002 is a logic level MOSFET with a low on-state resistance. The mosfet has a low gate to source threshold voltage of 2.1V typically this makes the mosfet suitable even for ...

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2N7000 Transistor: Circuit, Equivalent, Replacement [Video]

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DescriptionThe 2N7000 is a N-Channel Enhancement Mode Field Effect Transistor, a.k.a. MOSFET for voltage controlled small signal switching. 2N7000 N Channel Enhancement Mode MOSFET Switch Circuit B...

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2N7002K-T1-GE3
N-Channel 60V 300mA (Ta) 350mW (Ta) Surface Mount TO-236
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Package / Case: TO-236-3 SC-59 SOT-23-3
Series: TrenchFET®
Mfr: Vishay Siliconix
Base Product Number: 2N7002
Supplier Device Package: TO-236
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drive Voltage (Max Rds On Min Rds On): 4.5V 10V
Rds On (Max) @ Id Vgs: 2Ohm @ 500mA 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Vgs (Max): ±20V
FET Feature: -
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V

2N7002K-T1-GE3 N-channel MOSFET Transistor; 0.3 A; 60 V; 3-Pin SOT-23:Allied Electronics & Automation
2N7002K Series N-Channel 60 V 2 Ohm 0.6 nC MosFet Surface Mount - SOT-23-3:Future Electronics
Trans MOSFET N-CH Si 60V 0.3A 3-Pin SOT-23 T/R:Verical
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236:ComS.I.T. Europe - USA - Asia
MOSFET, N-CH, 60V, 0.3A, SOT23; Transistor Polarity:N Channel; Max Current Id:300mA; Max Voltage Vds:60V; On State Resistance:2ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:350mW; Operating Temperature ;RoHS Compliant: Yes:Newark

FEATURES

DESCRIPTION

The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

CHARACTERISTICS

• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics

Footprint

2N7002K-T1-GE3  Footprint

Symbol

2N7002K-T1-GE3  Symbol