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Home  Transistors - FETs, MOSFETs - Single  2SK3309(Q) Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 450V 10A (Ta) 65W (Tc) Through Hole TO-220FL

Jan 5 2021

2SK3309(Q) Datasheets | Transistors - FETs, MOSFETs - Single N-Channel 450V 10A (Ta) 65W (Tc) Through Hole TO-220FL

Product Overview

Image:
2SK3309-Q
Manufacturer Part#: 2SK3309(Q)
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: Toshiba Semiconductor and Storage
Description: N-Channel 450V 10A (Ta) 65W (Tc) Through Hole TO-220FL
Datasheet: 2SK3309
Package: TO-220-3, Short Tab
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

2SK3309(Q) Images are for reference only.

CAD Models

Product Attributes

Package / Case: TO-220-3 Short Tab
Mfr: Toshiba Semiconductor and Storage
Base Product Number: 2SJ200
Operating Temperature: 150°C (TJ)
Supplier Device Package: TO-220FL
Power Dissipation (Max): 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 650mOhm @ 5A 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Vgs (Max): ±30V
FET Feature: -
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V

Descriptions

MOSFET N-CH 450V 10A TO220FL:Digi-Key

FEATURES

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.)

• High forward transfer admittance: |Yfs| = 4.3 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
• Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)

Environmental & Export Classifications

Description Value
Moisture Sensitivity Level (MSL): 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.29.0095

Documents & Media

Datasheets: 2SK3309
HTML Datasheet: Mosfets Prod Guide

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2SK3309-Q 2SK3309(Q) Toshiba Semiconductor and Storage N-Channel 450V 10A (Ta) 65W (Tc) Through Hole TO-220FL On Order

N/A

2SK3309-Q 2SK3309(Q) Toshiba MOSFET N-CH 450V 10A TO220FL:Digi-Key
On Order

1:$0.950

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2SK3309-Q
N-Channel 450V 10A (Ta) 65W (Tc) Through Hole TO-220FL
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Package / Case: TO-220-3 Short Tab
Mfr: Toshiba Semiconductor and Storage
Base Product Number: 2SJ200
Operating Temperature: 150°C (TJ)
Supplier Device Package: TO-220FL
Power Dissipation (Max): 65W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 10V
Drain to Source Voltage (Vdss): 450V
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 650mOhm @ 5A 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Vgs (Max): ±30V
FET Feature: -
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V

MOSFET N-CH 450V 10A TO220FL:Digi-Key

FEATURES

Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.)

• High forward transfer admittance: |Yfs| = 4.3 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 450 V)
• Enhancement-mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA)

There is no relevant information available for this part yet.