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Home  Transistors - Bipolar (BJT) - Single  2N3700 Datasheets | Transistors - Bipolar (BJT) - Single TO 18 NPN SILICON TRANSISTOR

Jul 23 2020

2N3700 Datasheets | Transistors - Bipolar (BJT) - Single TO 18 NPN SILICON TRANSISTOR

Product Overview

Image:
2N3700
Manufacturer Part#: 2N3700
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: Solid State Inc.
Description: TO 18 NPN SILICON TRANSISTOR
Datasheet: 2N3700,2N3701 Datasheet
Package: N/A
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
10: 3.50000 35.00000
20: 0.50000 10.00000

2N3700 Images are for reference only.

2N3700

CAD Models

Product Attributes

Manufacturer: Solid State Inc.
Series: -
Packaging: Box
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib Ic: 500mV @ 50mA 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 100 @ 150mA 10V
Power - Max: 500mW
Frequency - Transition: 400MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA TO-18-3 Metal Can
Supplier Device Package: TO-18

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:2N3700 Compare: Current Part Manufacturers:ST Microelectronics Category:BJTs Description: Trans GP BJT NPN 80V 1A 0.5W(1/2W) 3Pin TO-18 Bag
Mfr.Part#:JANTX2N3700 Compare: 2N3700 VS JANTX2N3700 Manufacturers:Microsemi Category:BJTs Description: Trans GP BJT NPN 80V 1A 3Pin TO-18
Mfr.Part#:JANTXV2N3700 Compare: 2N3700 VS JANTXV2N3700 Manufacturers:Microsemi Category:BJTs Description: JANTXV Series 80V 1A Through Hole NPN Low Power Silicon Transistor - TO-18
Mfr.Part#:2N3700 Compare: 2N3700 VS 2N3700 Manufacturers:Multicomp Category:BJTs Description: MULTICOMP 2N3700 Bipolar (BJT) Single Transistor, NPN, 80V, 400MHz, 0.5W(1/2W), 1A, 300 hFE

Descriptions

TO 18 NPN Silicon Transistor, BULK:Newark

FEATURES

Design various electronic circuits with this versatile NPN 2N3700 GP BJT from Microsemi. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.

ECCN / UNSPSC

Description Value
USHTS: 8541290095
CNHTS: 8541290000
MXHTS: 85412999
TARIC: 8541290000
ECCN: EAR99

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): Not Applicable

Documents & Media

Datasheets: 2N3700,2N3701 Datasheet

Product Manufacturer

Solid State Inc. offers a comprehensive product line of high-quality components consisting of transistors, diodes, rectifiers, Schottky rectifiers, SCRs, diacs, triacs, and zeners. A wide variety of conventional leaded insertion-mount and surface-mount packaging is available. The Solid State brand of products is manufactured in world-class facilities to ensure the highest quality.

Popularity by Region

  • 1. United Kingdom
    100
  • 2. Dominica
    95
  • 3. Israel
    92
  • 4. El Salvador
    90
  • 5. Japan
    90
  • 6. Bahamas
    89
  • 7. Gabon
    89
  • 8. Ireland
    89
  • 9. United States
    88
  • 10. China
    86
  • 11. India
    84
  • 12. Bangladesh
    84
  • 13. Mexico
    83
  • 14. Germany
    83
  • 15. Morocco
    83
  • 16. Turks and Caicos Islands
    83
  • 17. Denmark
    82
  • 18. Guadeloupe
    82
  • 19. Iceland
    82
  • 20. Tunisia
    82
  • 21. Croatia
    82
  • 22. Slovenia
    82
  • 23. Vietnam
    82
  • 24. Canada
    82
  • 25. Guyana
    82
  • 26. Colombia
    82
  • 27. Sweden
    82
  • 28. Poland
    82
  • 29. Austria
    81
  • 30. Malaysia
    81
  • 31. Hong Kong
    80
  • 32. Angola
    80
  • 33. Panama
    80
  • 34. Egypt
    80
  • 35. France
    80
  • 36. Lithuania
    80
  • 37. Peru
    80
  • 38. Singapore
    80
  • 39. Bulgaria
    79
  • 40. Brazil
    79
  • 41. Spain
    79
  • 42. Italy
    79
  • 43. Azerbaijan
    79
  • 44. Philippines
    79
  • 45. Romania
    79
  • 46. Belgium
    79
  • 47. New Zealand
    79
  • 48. Australia
    79
  • 49. Kenya
    79
  • 50. Slovakia
    79
  • 51. Czech Republic
    79
  • 52. Ecuador
    78
  • 53. Argentina
    78
  • 54. South Africa
    78
  • 55. Nigeria
    78
  • 56. Russia
    78
  • 57. Ghana
    77
  • 58. Luxembourg
    77
  • 59. Netherlands
    77
  • 60. South Korea
    77
  • 61. Taiwan
    77
  • 62. Pakistan
    77
  • 63. Portugal
    77
  • 64. Serbia
    77
  • 65. Switzerland
    77
  • 66. Puerto Rico
    77
  • 67. Thailand
    76
  • 68. Sri Lanka
    76
  • 69. Hungary
    76
  • 70. Turkey
    76
  • 71. Chile
    75
  • 72. Saudi Arabia
    74
  • 73. Indonesia
    74
  • 74. Venezuela
    73
  • 75. Ukraine
    73
  • 76. United Arab Emirates
    73
  • 77. Norway
    71
  • 78. Paraguay
    71
  • 79. Madagascar
    71
  • 80. Finland
    70
  • 81. Belarus
    68
  • 82. Palestinian Territory
    66
  • 83. Anguilla
    66
  • 84. Latvia
    62

2N3700 Popularity by Region

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: Solid State Inc.
Series: -
Packaging: Box
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib Ic: 500mV @ 50mA 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 100 @ 150mA 10V
Power - Max: 500mW
Frequency - Transition: 400MHz
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA TO-18-3 Metal Can
Supplier Device Package: TO-18

TO 18 NPN Silicon Transistor, BULK:Newark

FEATURES

Design various electronic circuits with this versatile NPN 2N3700 GP BJT from Microsemi. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.

There is no relevant information available for this part yet.