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K4T51163QG-HCE6 Datasheets | DRAMs DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84,

By apogeeweb, K4T51163QG-HCE6, K4T51163QG-HCE6 Datasheet,K4T51163QG-HCE6 PDF,Samsung Semiconductor

Product Overview

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K4T51163QG-HCE6
Manufacturer Part#: K4T51163QG-HCE6
Product Category: DRAMs
Stock: On Order
Manufacturer: Samsung
Description: DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84,
Datasheet: N/A
Package: BGA
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer Part Number: K4T51163QG-HCE6
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code: unknown
Manufacturer: Samsung Semiconductor
Risk Rank: 5.79
Access Time-Max: 0.45 ns
I/O Type: COMMON
JESD-30 Code: R-PBGA-B84
JESD-609 Code: e1
Memory Density: 536870912 bit
Memory IC Type: DDR DRAM
Memory Width: 16
Number of Terminals: 84
Number of Words: 33554432 words
Number of Words Code: 32000000
Operating Temperature-Max: 95 °C
Organization: 32MX16
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Code: FBGA
Package Equivalence Code: BGA84,9X15,32
Package Shape: RECTANGULAR
Package Style: GRID ARRAY, FINE PITCH
Power Supplies: 1.8 V
Qualification Status: Not Qualified
Refresh Cycles: 8192
Standby Current-Max: 0.008 A
Subcategory: DRAMs
Supply Current-Max: 0.235 mA
Technology: CMOS
Temperature Grade: OTHER
Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form: BALL
Terminal Pitch: 0.8 mm
Terminal Position: BOTTOM
Clock Frequency-Max (fCLK): 333 MHz
Interleaved Burst Length: 4,8
Surface Mount: YES
Peak Reflow Temperature (Cel): 260
Time@Peak Reflow Temperature-Max (s): NOT SPECIFIED
Pbfree Code: Yes
Moisture Sensitivity Level: 3
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  • Features
  • Product Manufacturer

The 512Mb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 4banks or 16Mbit x 8 I/Os x 4banks or 8Mbit x 16 I/Os x 4 banks device. This synchronous device achieves high speed double data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.

Key Features

• JEDEC standard VDD = 1.8V ± 0.1V Power Supply
• VDDQ = 1.8V ± 0.1V
• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/Nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
-50ohm ODT
-High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C
• All of products are Lead-Free, Halogen-Free, and RoHS compliant

 

Samsung ARTIK, a product line of Samsung Semiconductor, is an integrated IoT platform that provides a fast path to deliver secure, interoperable, and intelligent IoT products and services. ARTIK unifies hardware, software, cloud, security, and a partner ecosystem in a single integrated offering. It hides the inherent complexity of IoT behind easy-to-use, open, and enterprise-grade APIs, SDKs, and tools, enabling any device to interact with any third-party device, app, or service. Using Samsung ARTIK, enterprises can quickly bring new IoT solutions to market, tap into new revenue streams, and grow their businesses.

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