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K4S641632H-TC75 Datasheets | DRAMs Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54

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Product Overview

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K4S641632H-TC75
Manufacturer Part#: K4S641632H-TC75
Product Category: DRAMs
Stock: On Order
Manufacturer: Samsung
Description: Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
Datasheet: N/A
Package: TSOP2, TSOP54,.46,32
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer Part Number: K4S641632H-TC75
Rohs Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: SAMSUNG SEMICONDUCTOR INC
Package Description: TSOP2, TSOP54,.46,32
Reach Compliance Code: unknown
Manufacturer: Samsung Semiconductor
Risk Rank: 5.25
Access Mode: FOUR BANK PAGE BURST
Access Time-Max: 5.4 ns
Additional Feature: AUTO/SELF REFRESH
I/O Type: COMMON
JESD-30 Code: R-PDSO-G54
Length: 22.22 mm
Memory Density: 67108864 bit
Memory IC Type: SYNCHRONOUS DRAM
Memory Width: 16
Number of Functions: 1
Number of Words: 4194304 words
Number of Words Code: 4000000
Operating Mode: SYNCHRONOUS
Operating Temperature-Max: 70 °C
Organization: 4MX16
Output Characteristics: 3-STATE
Package Body Material: PLASTIC/EPOXY
Package Equivalence Code: TSOP54,.46,32
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE, THIN PROFILE
Power Supplies: 3.3 V
Qualification Status: Not Qualified
Refresh Cycles: 4096
Seated Height-Max: 1.2 mm
Self Refresh: YES
Standby Current-Max: 0.001 A
Subcategory: DRAMs
Supply Current-Max: 0.135 mA
Supply Voltage-Max (Vsup): 3.6 V
Supply Voltage-Min (Vsup): 3 V
Technology: CMOS
Temperature Grade: COMMERCIAL
Terminal Form: GULL WING
Terminal Pitch: 0.8 mm
Terminal Position: DUAL
Width: 10.16 mm
Clock Frequency-Max (fCLK): 133 MHz
Interleaved Burst Length: 1,2,4,8
Sequential Burst Length: 1,2,4,8,FP
ECCN Code: EAR99
HTS Code: 8542.32.00.02
Part Package Code: TSOP2
Pin Count: 54
Peak Reflow Temperature (Cel): NOT SPECIFIED
Moisture Sensitivity Level: 3
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