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Jun 6 2020

K4T1G164QA-ZCD5 Datasheets| SAMSUNG| PDF| Price| In Stock

Product Overview

Kynix Part #:

KY32-K4T1G164QA-ZCD5

Manufacturer Part#:

K4T1G164QA-ZCD5

Product Category:

IC Chips

Stock:

Yes

Manufacturer:

SAMSUNG

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K4T1G164QA-ZCD5

Description:

-

Datasheet:

K4T1G164QA-ZCD5 Datasheet

Package:

BGA

Quantity:

955 PCS


K4T1G164QA-ZCD5 Images are for reference only.


CAD Models

There is no relevant information available for this part yet.


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

Manufacturer Part Number

K4T1G164QA-ZCD5

Rohs Code

Yes

Part Life Cycle Code

Obsolete

Ihs Manufacturer

SAMSUNG SEMICONDUCTOR INC

Package Description

FBGA, BGA84,9X15,32

Reach Compliance Code

compliant

Manufacturer

Samsung Semiconductor

Risk Rank

5.84

Access Time-Max

0.5 ns

Clock Frequency-Max (fCLK)

267 MHz

I/O Type

COMMON

Interleaved Burst Length

4,8

JESD-30 Code

R-PBGA-B84

JESD-609 Code

e1

Memory Density

1073741824 bit

Memory IC Type

DDR DRAM

Memory Width

16

Moisture Sensitivity Level

3

Number of Terminals

84

Number of Words

67108864 words

Number of Words Code

64000000

Organization

64MX16

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

FBGA

Package Equivalence Code

BGA84,9X15,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, FINE PITCH

Power Supplies

1.8 V

Qualification Status

Not Qualified

Refresh Cycles

8192

Sequential Burst Length

4,8

Standby Current-Max

0.015 A

Subcategory

DRAMs

Supply Current-Max

0.34 mA

Supply Voltage-Nom (Vsup)

1.8 V

Surface Mount

Yes

Technology

CMOS

Terminal Finish

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Terminal Form

BALL

Terminal Pitch

0.8 mm

Terminal Position

BOTTOM


Features

  • JEDEC standard VDD = 1.8V ± 0.1V Power Supply
  • VDDQ = 1.8V ± 0.1V
  • 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
  • 8 Banks
  • Posted CAS
  • Programmable CAS Latency: 3, 4, 5, 6
  • Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
  • Write Latency(WL) = Read Latency(RL) -1
  • Burst Length: 4 , 8(Interleave/nibble sequential)
  • Programmable Sequential / Interleave Burst Mode
  • Bi-directional Differential Data-Strobe (Single-ended data-strobe is anoptional feature)
  • Off-Chip Driver(OCD) Impedance Adjustment
  • On Die Termination
  • Special Function Support

       - 50ohm ODT

       - High Temperature Self-Refresh rate enable

  • Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at85°C < TCASE < 95 °C
  • All of products are Lead-Free, Halogen-Free, and RoHS compliant

Advantages and Disadvantages

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Applications

There is no relevant information available for this part yet.


Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

There is no relevant information available for this part yet.


Environmental & Export Classifications

Moisture Sensitivity Level (MSL)

3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.


Product Range

Dynamic random Access Memory

Solid State Disk

Embedded Memory

Multiple Layer Packaging Chip

Processor

Image Sensor

Device Security Solutions

Display Integrated Circuit

Power Integrated Circuit


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

955

Samsung Semiconductor

-

Rantle East Electronic

24

Samsung Semiconductor

-

Ande Electronics Co.,limited

720

Samsung Semiconductor

-

Bernal Technology Ltd

117

Samsung Semiconductor

-


Alternative Models

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Popularity by Region

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Market Price Analysis

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