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Jun 4 2020

K4N51163QG-HC20 Datasheets| SAMSUNG| PDF| Price| In Stock

Product Overview

Kynix Part #:

KY32-K4N51163QG-HC20

Manufacturer Part#:

K4N51163QG-HC20

Product Category:

Memory

Stock:

Yes

Manufacturer:

SAMSUNG

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K4N51163QG-HC20

Description:

-

Datasheet:

K4N51163QG-HC20 Datasheet

Package:

BGA

Quantity:

1005 PCS


K4N51163QG-HC20 Images are for reference only.

 


CAD Models

There is no relevant information available for this part yet.


Product Attributes

Categories

Integrated Circuits (ICs)

Memory ICs

Mfr Package Description

FBGA, BGA84,9X15,32

EU RoHS Compliant

Yes

REACH Compliant

Yes

Status

Active

Sub Category

DRAMs

Access Time-Max

0.35  ns

Clock Frequency-Max (fCLK)

500.0  MHz

Interleaved Burst Length

4,8

I/O Type

COMMON

JESD-30 Code

R-PBGA-B84

JESD-609 Code

e1

Memory Density

5.36870912E8  bit

Memory IC Type

DDR DRAM

Memory Width

16

Moisture Sensitivity Level

3

Number of Terminals

84

Number of Words

33554432 words

Number of Words Code

32M

Operating Temperature-Min

0.0  Cel

Operating Temperature-Max

95.0  Cel

Organization

32MX16

Output Characteristics

3-STATE

Package Body Material

PLASTIC/EPOXY

Package Code

FBGA

Package Equivalence Code

BGA84,9X15,32

Package Shape

RECTANGULAR

Package Style

GRID ARRAY, FINE PITCH

Qualification Status

Not Qualified

Refresh Cycles

8192.0

Sequential Burst Length

4,8

Standby Current-Max

0.007  Amp

Supply Current-Max

0.3  Amp

Supply Voltage-Nom (Vsup)

1.8  V

Surface Mount

Yes

Technology

CMOS

Temperature Grade

OTHER

Terminal Form

BALL

Terminal Pitch

0.8  mm

Terminal Position

BOTTOM

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)


Features

  • 1.8V + 0.1V power supply for device operation
  • 1.8V + 0.1V power supply for I/O interface
  • 4 Banks operation
  • Posted CAS
  • Programmable CAS Letency : 5, 6 ,7
  • Programmable Additive Latency : 0, 1, 2, 3, 4, 5, 6
  • Write Latency (WL) = Read Latency (RL) -1
  • Burst Legth : 4 and 8 (Interleave/nibble sequential)
  • Programmable Sequential/ Interleave Burst Mode
  • Bi-directional Differential Data-Strobe

 (Single-ended data-strobe is an optional feature)

  • Off-chip Driver (OCD) Impedance Adjustment
  • On Die Termination
  • Refresh and Self Refresh

 Average Refresh Period 7.8us at lower than TCASE 85 °C,

 3.9us at 85 °C < TCASE < 95 °C

  • Lead Free and Halogen Free 84 ball FBGA(RoHS compliant)

Advantages and Disadvantages

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Applications

There is no relevant information available for this part yet.


Product Functions

There is no relevant information available for this part yet.


ECCN / UNSPSC

There is no relevant information available for this part yet.


Environmental & Export Classifications

There is no relevant information available for this part yet.


Documents & Media

There is no relevant information available for this part yet.


Product Manufacturer

Samsung Semiconductor is a South Korean multinational electronics company headquartered in Suwon, South Korea. Due to some circular ownership, it is the flagship company of the Samsung chaebol. Samsung was founded by Lee Byung-chul in 1938 as a trading company. Discover the innovative semiconductor solutions including DRAM, SSD, processor, image sensor and other products for diverse industries to prepare mega trends with Samsung.


Product Range

Dynamic random Access Memory

Solid State Disk

Embedded Memory

Multiple Layer Packaging Chip

Processor

Image Sensor

Device Security Solutions

Display Integrated Circuit

Power Integrated Circuit


Distributors

Distributor

Stock

Manufacturer

Descriptions

Kynix

1005

Samsung Semiconductor

-

Agec

2000

Samsung Semiconductor

-

Rantle East Electronic

15

Samsung Semiconductor

-

Ande Electronics Co.,limited

982

Samsung Semiconductor

-


Alternative Models

There is no relevant information available for this part yet.


Popularity by Region

There is no relevant information available for this part yet.


Market Price Analysis

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