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STW4N150 Datasheets | Discrete Semiconductors MOSFET N-channel 1500 V PowerMesh

By apogeeweb, STW4N150, STW4N150 Datasheet,STW4N150 PDF,STMicroelectronics

Product Overview

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STW4N150
Manufacturer Part#: STW4N150
Product Category: Discrete Semiconductors
Stock: On Order
Manufacturer: STMicroelectronics
Description: MOSFET N-channel 1500 V PowerMesh
Datasheet: N/A
Package: N/A
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Details
Mounting Style: Through Hole
Package / Case: TO-247-3
Configuration: Single
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: STW4N150
Packaging: Tube
Height: 20.15 mm
Length: 15.75 mm
Width: 5.15 mm
Brand: STMicroelectronics
Pd - Power Dissipation: 160 W
Product Type: MOSFET
Factory Pack Quantity: 600
Subcategory: MOSFETs
Unit Weight: 1.340411 oz
Technology: Si
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 1.5 kV
Id - Continuous Drain Current: 4 A
Rds On - Drain-Source Resistance: 7 Ohms
Number of Channels: 1 Channel
Vgs - Gate-Source Voltage: 10 V
Channel Mode: Enhancement
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 35 ns
Vgs th - Gate-Source Threshold Voltage: 3 V
Fall Time: 45 ns
Rise Time: 30 ns
Qg - Gate Charge: 30 nC
Tradename: PowerMESH
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Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:STW4N150 Compare: Current Part Manufacturers:St microelectronics Category:MOSFETs Description: N-channel 1500v - 5ω - 4a - powermesh™ power mosfet to-220 - to-220fh - to-247 - to-3pf
Mfr.Part#:STFW4N150 Compare: STW4N150 VS STFW4N150 Manufacturers:St microelectronics Category:MOSFETs Description: N-channel 1500v - 5ω - 4a - powermesh™ power mosfet to-220 - to-220fh - to-247 - to-3pf

Descriptions

Power Mosfet, N Channel, 4 A, 1.5 Kv, 7 Ohm, 10 V, 4 V Rohs Compliant: Yes:Newark
STW4N150 Series 1500 V 5 Ohm 4 A N-Channel PowerMESH™ Power Mosfet - TO-247-3:Future Electronics
Transistor MOSFET N-CH 1.5KV 4A 3-Pin (3+Tab) TO-247 Tube:North Star Micro

  • Features
  • Product Manufacturer

FEATURES

Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances.
The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.

100% avalanche tested

Intrinsic capacitances and Qg minimized
High speed switching
Fully isolated TO-3PF and TO-220FH plastic packages
Creepage distance path is 5.4 mm (typ.) for TO-3PF
Creepage distance path is > 4 mm for TO-220FH

Application
Switching applications

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

  • ECCN/UNSPSC
Description Value
USHTS: 8541290095
CNHTS: 8541210000
MXHTS: 85412101
TARIC: 8541210000
ECCN: EAR99
Description Value
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