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Jul 23 2020

STP60NF06 Datasheets | Transistors - FETs, MOSFETs - Single MOSFET N-CH 60V 60A TO-220

Product Overview

Image:
STP60NF06
Manufacturer Part#: STP60NF06
Product Category: Transistors - FETs, MOSFETs - Single
Stock: Yes
Manufacturer: STMicroelectronics
Description: MOSFET N-CH 60V 60A TO-220
Datasheet: STP60NF06
Package: N/A
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: 9269 PCS
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 1.25000 1.25000
10: 11.21000 112.10000
25: 26.60000 665.00000
100: 79.80000 7980.00000
250: 197.60000 49400.00000
500: 338.20000 169100.00000
1000: 551.00000 551000.00000
2500: 1358.50000 3396250.00000
5000: 2470.00000 12350000.00000

STP60NF06 Images are for reference only.

STP60NF06

CAD Models

Footprint

STP60NF06  Footprint

Symbol

STP60NF06  Symbol

Product Attributes

Manufacturer: STMicroelectronics
Series: STripFET™ II
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 16mOhm @ 30A 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: STP60N

Alternative Models

FDP55N06
ON Semiconductor FDP55N06
priceUSD 0.658
Input Capacitance1.51 nF
Power Dissipation114 W
Gate to Source Voltage (Vgs)25 V
Rds On Max22 mΩ
Threshold Voltage2 V
Continuous Drain Current (ID)55 A
Drain to Source Voltage (Vdss)60 V
Case/PackageTO-220
MountThrough Hole
Authorized Distributors9
FDP65N06
ON Semiconductor FDP65N06
priceUSD 0.717
Input Capacitance2.17 nF
Power Dissipation135 W
Gate to Source Voltage (Vgs)20 V
Rds On Max16 mΩ
Threshold Voltage-
Continuous Drain Current (ID)65 A
Drain to Source Voltage (Vdss)60 V
Case/PackageTO-220
MountThrough Hole
Authorized Distributors11
STP55NF06
STMicroelectronics STP55NF06
priceUSD 0.483
Input Capacitance1.3 nF
Power Dissipation110 W
Gate to Source Voltage (Vgs)20 V
Rds On Max18 mΩ
Threshold Voltage3 V
Continuous Drain Current (ID)50 A
Drain to Source Voltage (Vdss)60 V
Case/PackageTO-220
MountThrough Hole
Authorized Distributors11
STP55NF06L
STMicroelectronics STP55NF06L
priceUSD 0.710
Input Capacitance1.7 nF
Power Dissipation95 W
Gate to Source Voltage (Vgs)16 V
Rds On Max18 mΩ
Threshold Voltage1.7 V
Continuous Drain Current (ID)55 A
Drain to Source Voltage (Vdss)60 V
Case/PackageTO-220
MountThrough Hole
Authorized Distributors11
STP65NF06
STMicroelectronics STP65NF06
priceUSD 0.647
Input Capacitance1.7 nF
Power Dissipation110 W
Gate to Source Voltage (Vgs)20 V
Rds On Max14 mΩ
Threshold Voltage4 V
Continuous Drain Current (ID)60 A
Drain to Source Voltage (Vdss)60 V
Case/PackageTO-220
MountThrough Hole
Authorized Distributors10

Descriptions

There is no relevant information available for this part yet.

FEATURES

If you need to either amplify or switch between signals in your design, then STMicroelectronics' STP60NF06 power MOSFET is for you. Its maximum power dissipation is 150000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet ii technology. This N channel MOSFET transistor operates in enhancement mode.

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Documents & Media

Datasheets: STP60NF06
Other Related Documents: STP60NF06 View All Specifications
Featured Product: Power MOSFETs
Product Training Modules: STMicroelectronics ST MOSFETs
HTML Datasheet: STP60NF06
EDA / CAD Models: Download from Ultra Librarian
Online Catalog: N-Channel MOSFET (Metal Oxide)

Product Manufacturer

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
STP60NF06 STP60NF06 STMicroelectronics MOSFET N-CH 60V 60A TO-220   9,234

1:$1.25000

10:$1.12100

25:$1.06400

100:$0.79800

500:$0.67640

1,000:$0.55100

2,500:$0.54340

5,000:$0.49400

9,000:$0.47120

STP60NF06 STP60NF06 STMicroelectronics MOSFET N-Ch 60 Volt 60 Amp   On Order

1:$1.25

10:$1.06

100:$0.797

250:$0.774

500:$0.676

1,000:$0.55

2,000:$0.534

5,000:$0.493

10,000:$0.471

STP60NF06 STP60NF06 STMicroelectronics N-Channel 60V - 0.014Ohm - 60A - TO-220 StripFET(TM) II MOSFET:STMicroelectronics
MOSFET N Trench 60V 60A 4V @ 250uA 16 m¦¸ @ 30A,10V TO-220(TO-220-3) RoHS:Utmel Electronic
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube:Verical
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 110 W:Distrelec
N-Channel 60 V 16 mO STripFET II Power MosFet - TO-220:Future Electronics
 
On Order

1:$0.545

STP60NF06 STP60NF06 STMicroelectronics N-Channel 60V - 0.014Ohm - 60A - TO-220 StripFET(TM) II MOSFET   On Order

$0.6965 / $1.4568

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: STMicroelectronics
Series: STripFET™ II
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On Min Rds On): 10V
Rds On (Max) @ Id Vgs: 16mOhm @ 30A 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 73nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1660pF @ 25V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3
Base Part Number: STP60N

There is no relevant information available for this part yet.

FEATURES

If you need to either amplify or switch between signals in your design, then STMicroelectronics' STP60NF06 power MOSFET is for you. Its maximum power dissipation is 150000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This device is made with stripfet ii technology. This N channel MOSFET transistor operates in enhancement mode.
Footprint

STP60NF06  Footprint

Symbol

STP60NF06  Symbol