FEATURES
DESCRIPTION
The 74V1G08 is an advanced high-speed CMOS SINGLE 2-INPUT AND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
■ HIGH SPEED: tPD = 3.8ns (TYP.) at VCC = 5V
■ LOW POWER DISSIPATION:
ICC = 1µA(MAX.) at TA=25°C
■ HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
■ POWER DOWN PROTECTION ON INPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|IOH| = IOL = 8mA (MIN) at VCC = 4.5V
■ BALANCED PROPAGATION DELAYS:
tPLH ≅ tPHL
■ OPERATING VOLTAGE RANGE:
VCC(OPR) = 2V to 5.5V
■ IMPROVED LATCH-UP IMMUNITY
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