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Jan 5 2021

2N1711 Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 50V 500mA 100MHz 800mW Through Hole TO-39

Product Overview

Image:
2N1711
Manufacturer Part#: 2N1711
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: STMicroelectronics
Description: Bipolar (BJT) Transistor NPN 50V 500mA 100MHz 800mW Through Hole TO-39
Datasheet: 2N1711
Package: TO-205AD, TO-39-3 Metal Can
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

2N1711 Images are for reference only.

2N1711

CAD Models

Product Attributes

Package / Case: TO-205AD TO-39-3 Metal Can
Package: Tube
Base Product Number: 2N17
Supplier Device Package: TO-39
Power - Max: 800mW
Transistor Type: NPN
Vce Saturation (Max) @ Ib Ic: 1.5V @ 15mA 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 35 @ 100mA 10V
Frequency - Transition: 100MHz
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:2N1711 Compare: Current Part Manufacturers:ST Microelectronics Category:BJTs Description: Trans GP BJT NPN 50V 0.5A 3Pin TO-39 Bag
Mfr.Part#:2N1711 Compare: 2N1711 VS 2N1711 Manufacturers:Multicomp Category:BJTs Description: Bipolar (BJT) Single Transistor, NPN, 50V, 70MHz, 3W, 500mA, 35 hFE
Mfr.Part#:JANTX2N1711 Compare: 2N1711 VS JANTX2N1711 Manufacturers:Microsemi Category:BJTs Description: TO-5 NPN 30V 0.5A
Mfr.Part#:JANTX2N1711S Compare: 2N1711 VS JANTX2N1711S Manufacturers:Microsemi Category:BJTs Description: TO-5 NPN 30V 0.5A

Descriptions

TRANS, NPN, 50V, 0.5A, 200DEG C, 3W:element14 APAC
Bipolar Transistor, Npn, 50V, To-39; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:500Ma; Power Dissipation Pd:800Mw; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:-; Msl:-Rohs Compliant: Yes:Newark

FEATURES

DESCRIPTION

NPN medium power transistor in a TO-39 metal package.

FEATURES

• High current (max. 500 mA)
• Low voltage (max. 50 V).

APPLICATIONS

• DC and wideband amplifiers.

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.21.0075

Documents & Media

Datasheets: 2N1711
HTML Datasheet: 2N1711
EDA / CAD Models: 2N1711 by Ultra Librarian

Product Manufacturer

STMicroelectronics is a global independent semiconductor company and is a leader in developing and delivering semiconductor solutions across the spectrum of microelectronics applications. An unrivaled combination of silicon and system expertise, manufacturing strength, Intellectual Property (IP) portfolio and strategic partners positions the Company at the forefront of System-on-Chip (SoC) technology and its products play a key role in enabling today's convergence trends.

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2N1711 2N1711 STMicroelectronics Bipolar (BJT) Transistor NPN 50V 500mA 100MHz 800mW Through Hole TO-39 On Order

N/A

2N1711 2N1711 Multicomp TRANS, NPN, 50V, 0.5A, 200DEG C, 3W:element14 APAC
Bipolar Transistor, Npn, 50V, To-39; Transist

View All

r Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:500Ma; Power Dissipation Pd:800Mw; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:-; Msl:-Rohs Compliant: Yes:Newark

On Order

1:$0.623

2N1711 2N1711 Microsemi Corporation Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, On Order

N/A

Popularity by Region

  • 1. Belgium
    100
  • 2. Serbia
    89
  • 3. Uruguay
    89
  • 4. Reunion
    89
  • 5. Denmark
    88
  • 6. Solomon Islands
    87
  • 7. Norway
    87
  • 8. Paraguay
    87
  • 9. Svalbard and Jan Mayen
    86
  • 10. Switzerland
    85
  • 11. Chile
    85
  • 12. Democratic Republic of the Congo
    85
  • 13. Algeria
    84
  • 14. China
    84
  • 15. Ivory Coast
    83
  • 16. Albania
    83
  • 17. Egypt
    83
  • 18. Kiribati
    82
  • 19. Sri Lanka
    82
  • 20. El Salvador
    81
  • 21. Honduras
    81
  • 22. Netherlands
    81
  • 23. Portugal
    81
  • 24. Bangladesh
    81
  • 25. Czech Republic
    81
  • 26. Hungary
    81
  • 27. Peru
    81
  • 28. Thailand
    81
  • 29. Tunisia
    81
  • 30. Canada
    80
  • 31. Romania
    80
  • 32. Bulgaria
    80
  • 33. New Zealand
    80
  • 34. Ireland
    80
  • 35. Saudi Arabia
    80
  • 36. Finland
    79
  • 37. Australia
    79
  • 38. Iraq
    79
  • 39. Austria
    78
  • 40. Greece
    78
  • 41. Israel
    78
  • 42. Pakistan
    78
  • 43. Turkey
    78
  • 44. South Africa
    78
  • 45. Malaysia
    78
  • 46. Colombia
    78
  • 47. Philippines
    77
  • 48. Croatia
    77
  • 49. Indonesia
    77
  • 50. Kazakhstan
    77
  • 51. Slovenia
    77
  • 52. Nigeria
    77
  • 53. Belarus
    75
  • 54. Spain
    75
  • 55. Poland
    75
  • 56. United States
    75
  • 57. Kuwait
    74
  • 58. Hong Kong
    73
  • 59. Italy
    73
  • 60. Ethiopia
    72
  • 61. Japan
    72
  • 62. Brazil
    72
  • 63. Cameroon
    72
  • 64. India
    72
  • 65. Bosnia and Herzegovina
    72
  • 66. Ecuador
    71
  • 67. Palestinian Territory
    71
  • 68. Georgia
    71
  • 69. Singapore
    71
  • 70. Germany
    70
  • 71. Vietnam
    70
  • 72. Liechtenstein
    70
  • 73. Slovakia
    70
  • 74. Latvia
    69
  • 75. France
    69
  • 76. United Arab Emirates
    68
  • 77. United Kingdom
    68
  • 78. Mexico
    68
  • 79. Ukraine
    68
  • 80. Cyprus
    64
  • 81. Argentina
    64
  • 82. South Korea
    64
  • 83. Morocco
    64
  • 84. Sweden
    64
  • 85. Russia
    61
  • 86. Taiwan
    61
  • 87. Mauritius
    45

2N1711 Popularity by Region

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2N1711
Bipolar (BJT) Transistor NPN 50V 500mA 100MHz 800mW Through Hole TO-39
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Package / Case: TO-205AD TO-39-3 Metal Can
Package: Tube
Base Product Number: 2N17
Supplier Device Package: TO-39
Power - Max: 800mW
Transistor Type: NPN
Vce Saturation (Max) @ Ib Ic: 1.5V @ 15mA 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic Vce: 35 @ 100mA 10V
Frequency - Transition: 100MHz
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V

TRANS, NPN, 50V, 0.5A, 200DEG C, 3W:element14 APAC
Bipolar Transistor, Npn, 50V, To-39; Transistor Polarity:npn; Collector Emitter Voltage V(Br)Ceo:50V; Dc Collector Current:500Ma; Power Dissipation Pd:800Mw; Transistor Mounting:through Hole; No. Of Pins:3Pins; Product Range:-; Msl:-Rohs Compliant: Yes:Newark

FEATURES

DESCRIPTION

NPN medium power transistor in a TO-39 metal package.

FEATURES

• High current (max. 500 mA)
• Low voltage (max. 50 V).

APPLICATIONS

• DC and wideband amplifiers.

There is no relevant information available for this part yet.