Product Overview
Image: |
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Manufacturer Part#: | 2SC4081U3T106S |
Product Category: | Transistors - Bipolar (BJT) - Single |
Stock: | No |
Manufacturer: | Rohm Semiconductor |
Description: | Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3 |
Datasheet: | 2SC2412K, 4081Ux, 4617(EB), 5658 |
Package: | SC-70, SOT-323 |
Minimum: | 1 |
Lead Time: | 13 Weeks |
Quantity: | On Order |
Send RFQ: | Inquiry |
Reference Price
Qty | Unit Price | Ext. Price |
1: | 0.20000 | 0.20000 |
10: | 0.18400 | 1.84000 |
25: | 0.17520 | 4.38000 |
100: | 0.07700 | 7.70000 |
500: | 0.06048 | 30.24000 |
1000: | 0.04200 | 42.00000 |
3000: | 0.03668 | 110.04000 |
6000: | 0.03290 | 197.40000 |
9000: | 0.02800 | 252.00000 |
30000: | 0.02590 | 777.00000 |
75000: | 0.02240 | 1680.00000 |
2SC4081U3T106S Images are for reference only.
Product Attributes
Supplier Device Package: | UMT3 |
Power - Max: | 200mW |
Transistor Type: | NPN |
Vce Saturation (Max) @ Ib Ic: | 400mV @ 5mA 50mA |
DC Current Gain (hFE) (Min) @ Ic Vce: | 120 @ 1mA 6V |
Frequency - Transition: | 180MHz |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Descriptions
There is no relevant information available for this part yet.
FEATURES
Features
1) Low Cob.Cob=2.0pF (Typ.)
2) Complements the 2SA1576UB.
Applications
General purpose small signal amplifierStructure
NPN silicon epitaxial planar transistorEnvironmental & Export Classifications
Description | Value |
RoHS Status: | ROHS3 Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
ECCN: | EAR99 |
HTSUS: | 8541.21.0075 |
Documents & Media
Datasheets: | 2SC2412K, 4081Ux, 4617(EB), 5658 |
EDA / CAD Models: | 2SC4081U3T106S by Ultra Librarian |
Product Manufacturer
ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products. ROHM's presence in the North American market continues to expand with a logistic headquarters in San Diego, California, a design center in San Jose, California, a QA Center in Novi, Michigan, a sales office in Guadalajara, Mexico and a sales network that covers marketing, sales, and engineering support for the North and South American clients from Canada to Brazil. In addition to a direct sales force, ROHM enjoys the collaboration of several sales-representative organizations and industry leading electronics distributors. For more than forty years, ROHM has stayed focused on the fundamental philosophy of customization. The company has worked closely with equipment manufacturers to develop next generation equipment and use the technology acquired through these efforts to propose system solutions to its customers and continually provide them with high added values. The majority of ROHM's manufacturing equipment has been developed in-house. This has given ROHM the ability to respond immediately to changing market needs. The extent of ROHM products is a result of innovations and the capability to adjust to market demands. Automotive, telecommunication, computer, and consumer OEMs are among the leading end users of ROHM products.Distributors
Image | PartNo | Manufacturer | Descriptions | Stock | Step Price |
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2SC4081U3T106S | Rohm Semiconductor | Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3 | On Order | 1:$$0.20000 10:$$0.18400 25:$$0.17520 100:$$0.07700 500:$$0.06048 1,000:$$0.04200 3,000:$$0.03668 6,000:$$0.03290 9,000:$$0.02800 30,000:$$0.02590 75,000:$$0.02240 |
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2SC4081U3T106S | Rohm | N/A | On Order | 1:$0.042 |
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2SC4081U3T106S | ROHM Semiconductor | Small Signal Bipolar Transistor, | On Order | $0.2359 |
Popularity by Region
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60. Spain73
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61. United States73
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62. Belgium64
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63. Hong Kong63
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64. India61
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- Product Attributes
- Descriptions
- Features
- CAD Models
2SC4081U3T106S Popularity by Region
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Supplier Device Package: | UMT3 |
Power - Max: | 200mW |
Transistor Type: | NPN |
Vce Saturation (Max) @ Ib Ic: | 400mV @ 5mA 50mA |
DC Current Gain (hFE) (Min) @ Ic Vce: | 120 @ 1mA 6V |
Frequency - Transition: | 180MHz |
Voltage - Collector Emitter Breakdown (Max): | 50V |
There is no relevant information available for this part yet.
FEATURES
Features
1) Low Cob.Cob=2.0pF (Typ.)
2) Complements the 2SA1576UB.
Applications
General purpose small signal amplifierStructure
NPN silicon epitaxial planar transistorThere is no relevant information available for this part yet.