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Home  Transistors - Bipolar (BJT) - Single  2SC4081U3T106Q Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3

Jan 5 2021

2SC4081U3T106Q Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3

Product Overview

Image:
2SC4081U3T106Q
Manufacturer Part#: 2SC4081U3T106Q
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: Rohm Semiconductor
Description: Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3
Datasheet: 2SC2412K, 4081Ux, 4617(EB), 5658
Package: SC-70, SOT-323
Minimum: 1
Lead Time: 13 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 0.20000 0.20000
10: 0.16100 1.61000
25: 0.13520 3.38000
100: 0.06600 6.60000
500: 0.05506 27.53000
1000: 0.03825 38.25000
3000: 0.03555 106.65000
6000: 0.03075 184.50000
9000: 0.02550 229.50000
30000: 0.02505 751.50000
75000: 0.02250 1687.50000

2SC4081U3T106Q Images are for reference only.

2SC4081U3T106Q

CAD Models

Product Attributes

Supplier Device Package: UMT3
Power - Max: 200mW
Transistor Type: NPN
Vce Saturation (Max) @ Ib Ic: 400mV @ 5mA 50mA
DC Current Gain (hFE) (Min) @ Ic Vce: 120 @ 1mA 6V
Frequency - Transition: 180MHz
Voltage - Collector Emitter Breakdown (Max): 50V

Descriptions

There is no relevant information available for this part yet.

FEATURES

Features

1) Low Cob.
Cob=2.0pF (Typ.)
2) Complements the 2SA1576UB.

Applications

General purpose small signal amplifier

Structure

NPN silicon epitaxial planar transistor

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.21.0075

Documents & Media

Datasheets: 2SC2412K, 4081Ux, 4617(EB), 5658
EDA / CAD Models: 2SC4081U3T106Q by Ultra Librarian

Product Manufacturer

ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products. ROHM's presence in the North American market continues to expand with a logistic headquarters in San Diego, California, a design center in San Jose, California, a QA Center in Novi, Michigan, a sales office in Guadalajara, Mexico and a sales network that covers marketing, sales, and engineering support for the North and South American clients from Canada to Brazil. In addition to a direct sales force, ROHM enjoys the collaboration of several sales-representative organizations and industry leading electronics distributors. For more than forty years, ROHM has stayed focused on the fundamental philosophy of customization. The company has worked closely with equipment manufacturers to develop next generation equipment and use the technology acquired through these efforts to propose system solutions to its customers and continually provide them with high added values. The majority of ROHM's manufacturing equipment has been developed in-house. This has given ROHM the ability to respond immediately to changing market needs. The extent of ROHM products is a result of innovations and the capability to adjust to market demands. Automotive, telecommunication, computer, and consumer OEMs are among the leading end users of ROHM products.

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2SC4081U3T106Q 2SC4081U3T106Q Rohm Semiconductor Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3 On Order

1:$$0.20000

10:$$0.16100

25:$$0.13520

100:$$0.06600

500:$$0.05506

1,000:$$0.03825

3,000:$$0.03555

6,000:$$0.03075

9,000:$$0.02550

30,000:$$0.02505

75,000:$$0.02250

2SC4081U3T106Q 2SC4081U3T106Q ROHM Semiconductor Small Signal Bipolar Transistor, On Order

$0.2000 / $0.5000

Popularity by Region

  • 1. United Kingdom
    100
  • 2. China
    93
  • 3. Germany
    92
  • 4. Tunisia
    91
  • 5. Luxembourg
    83
  • 6. Australia
    83
  • 7. Cambodia
    83
  • 8. Saint Pierre and Miquelon
    82
  • 9. Brazil
    81
  • 10. Malaysia
    80
  • 11. Slovenia
    80
  • 12. South Africa
    79
  • 13. Mexico
    79
  • 14. Kiribati
    79
  • 15. Swaziland
    79
  • 16. Costa Rica
    77
  • 17. Hungary
    77
  • 18. Moldova
    77
  • 19. Madagascar
    77
  • 20. Honduras
    77
  • 21. United Arab Emirates
    76
  • 22. Nigeria
    76
  • 23. Bhutan
    76
  • 24. Romania
    75
  • 25. Russia
    75
  • 26. Kazakhstan
    75
  • 27. Equatorial Guinea
    75
  • 28. Argentina
    75
  • 29. Vietnam
    75
  • 30. Dominica
    74
  • 31. Thailand
    74
  • 32. Algeria
    74
  • 33. Spain
    74
  • 34. Bolivia
    73
  • 35. Croatia
    73
  • 36. United States
    73
  • 37. Portugal
    73
  • 38. Greece
    73
  • 39. Japan
    72
  • 40. Bosnia and Herzegovina
    72
  • 41. Colombia
    72
  • 42. Indonesia
    72
  • 43. Turkey
    72
  • 44. Ukraine
    72
  • 45. Haiti
    72
  • 46. France
    71
  • 47. Taiwan
    71
  • 48. Belarus
    71
  • 49. Egypt
    71
  • 50. Philippines
    71
  • 51. Switzerland
    71
  • 52. Sweden
    71
  • 53. Bangladesh
    71
  • 54. South Korea
    71
  • 55. Netherlands
    70
  • 56. Czech Republic
    70
  • 57. Poland
    70
  • 58. Latvia
    70
  • 59. Bulgaria
    69
  • 60. Denmark
    69
  • 61. Austria
    69
  • 62. Tanzania
    69
  • 63. Finland
    68
  • 64. Canada
    67
  • 65. Singapore
    67
  • 66. Chile
    66
  • 67. Pakistan
    66
  • 68. Italy
    62
  • 69. Belgium
    59
  • 70. Hong Kong
    58
  • 71. India
    56
  • 72. Israel
    56

2SC4081U3T106Q Popularity by Region

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2SC4081U3T106Q
Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Supplier Device Package: UMT3
Power - Max: 200mW
Transistor Type: NPN
Vce Saturation (Max) @ Ib Ic: 400mV @ 5mA 50mA
DC Current Gain (hFE) (Min) @ Ic Vce: 120 @ 1mA 6V
Frequency - Transition: 180MHz
Voltage - Collector Emitter Breakdown (Max): 50V

There is no relevant information available for this part yet.

FEATURES

Features

1) Low Cob.
Cob=2.0pF (Typ.)
2) Complements the 2SA1576UB.

Applications

General purpose small signal amplifier

Structure

NPN silicon epitaxial planar transistor

There is no relevant information available for this part yet.