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Home  Transistors - Bipolar (BJT) - Single  2SC4081U3HZGT106Q Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3

Jan 5 2021

2SC4081U3HZGT106Q Datasheets | Transistors - Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3

Product Overview

Image:
2SC4081U3HZGT106Q
Manufacturer Part#: 2SC4081U3HZGT106Q
Product Category: Transistors - Bipolar (BJT) - Single
Stock: No
Manufacturer: Rohm Semiconductor
Description: Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3
Datasheet: N/A
Package: SC-70, SOT-323
Minimum: 1
Lead Time: 13 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1: 0.32000 0.32000
10: 0.25800 2.58000
25: 0.21600 5.40000
100: 0.10560 10.56000
500: 0.08808 44.04000
1000: 0.06120 61.20000
3000: 0.05688 170.64000
6000: 0.04920 295.20000
9000: 0.04080 367.20000
30000: 0.04008 1202.40000
75000: 0.03600 2700.00000

2SC4081U3HZGT106Q Images are for reference only.

2SC4081U3HZGT106Q

CAD Models

Product Attributes

Supplier Device Package: UMT3
Power - Max: 200mW
Transistor Type: NPN
Vce Saturation (Max) @ Ib Ic: 400mV @ 5mA 50mA
DC Current Gain (hFE) (Min) @ Ic Vce: 120 @ 1mA 6V
Frequency - Transition: 180MHz
Voltage - Collector Emitter Breakdown (Max): 50V

Descriptions

There is no relevant information available for this part yet.

FEATURES

Features

1) Low Cob.
Cob=2.0pF (Typ.)
2) Complements the 2SA1576UB.

Applications

General purpose small signal amplifier

Structure

NPN silicon epitaxial planar transistor

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
ECCN: EAR99
HTSUS: 8541.21.0075

Documents & Media

EDA / CAD Models: 2SC4081U3HZGT106Q by Ultra Librarian

Product Manufacturer

ROHM was established in Kyoto, Japan, in 1958. ROHM designs and manufactures semiconductors, integrated circuits and other electronic components. These components find a home in the dynamic and ever-growing wireless, computer, automotive and consumer electronics markets. Some of the most innovative equipment and devices use ROHM products. ROHM's presence in the North American market continues to expand with a logistic headquarters in San Diego, California, a design center in San Jose, California, a QA Center in Novi, Michigan, a sales office in Guadalajara, Mexico and a sales network that covers marketing, sales, and engineering support for the North and South American clients from Canada to Brazil. In addition to a direct sales force, ROHM enjoys the collaboration of several sales-representative organizations and industry leading electronics distributors. For more than forty years, ROHM has stayed focused on the fundamental philosophy of customization. The company has worked closely with equipment manufacturers to develop next generation equipment and use the technology acquired through these efforts to propose system solutions to its customers and continually provide them with high added values. The majority of ROHM's manufacturing equipment has been developed in-house. This has given ROHM the ability to respond immediately to changing market needs. The extent of ROHM products is a result of innovations and the capability to adjust to market demands. Automotive, telecommunication, computer, and consumer OEMs are among the leading end users of ROHM products.

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2SC4081U3HZGT106Q 2SC4081U3HZGT106Q Rohm Semiconductor Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3 On Order

1:$$0.32000

10:$$0.25800

25:$$0.21600

100:$$0.10560

500:$$0.08808

1,000:$$0.06120

3,000:$$0.05688

6,000:$$0.04920

9,000:$$0.04080

30,000:$$0.04008

75,000:$$0.03600

2SC4081U3HZGT106Q 2SC4081U3HZGT106Q Rohm N/A On Order

1:$0.063

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2SC4081U3HZGT106Q
Bipolar (BJT) Transistor NPN 50V 150mA 180MHz 200mW Surface Mount UMT3
  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Supplier Device Package: UMT3
Power - Max: 200mW
Transistor Type: NPN
Vce Saturation (Max) @ Ib Ic: 400mV @ 5mA 50mA
DC Current Gain (hFE) (Min) @ Ic Vce: 120 @ 1mA 6V
Frequency - Transition: 180MHz
Voltage - Collector Emitter Breakdown (Max): 50V

There is no relevant information available for this part yet.

FEATURES

Features

1) Low Cob.
Cob=2.0pF (Typ.)
2) Complements the 2SA1576UB.

Applications

General purpose small signal amplifier

Structure

NPN silicon epitaxial planar transistor

There is no relevant information available for this part yet.