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IRG4PH50UDPBF Datasheets | IGBTs - Single ULTRAFAST COPACK IGBT W/ULTRAFAS

By apogeeweb, IRG4PH50UDPBF, IRG4PH50UDPBF Datasheet,IRG4PH50UDPBF PDF,Rochester Electronics, LLC

Product Overview

Image:
IRG4PH50UDPBF
Manufacturer Part#: IRG4PH50UDPBF
Product Category: IGBTs - Single
Stock: On Order
Manufacturer: Rochester Electronics
Description: ULTRAFAST COPACK IGBT W/ULTRAFAS
Datasheet: N/A
Package: N/A
Minimum: 1
Quantity: On Order

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Product Attributes

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Manufacturer: Rochester Electronics LLC
Series: *
Packaging: Bulk
Part Status: Active
Package / Case:
8-TSSOP (0.173" 4.40mm Width)
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Descriptions

Transistor IGBT Chip Negative Channel 1.2K Volt 45A 3-Pin(3+Tab) TO-247AC:Jameco
IRG4PH50U series 1200 V 45 A Through Hole N-Channel UltraFast IGBT - TO-247AC:Future Electronics
Transistor IGBT Chip N-CH 1200V 45A 3-Pin TO-247AC Tube:Avnet Europe
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 1200 V Collector-emitter saturation voltage: 2.56 V Current release time: 180 ns Power dissipation: 200 W:Distrelec
IGBT, 1200V, 45A, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:3.7V; Power Dissipation:200W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:1200V; Current, Icm Pulsed:180A; No. of Pins:3; Power, Pd:200W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:260ns; Time, Rise:24ns; Transistors, No. of:1:Farnell

  • Features
  • Product Manufacturer

FEATURES

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
• New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package
• Lead-Free

Benefits

• Higher switching frequency capability than competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require
less/no snubbing

Rochester Electronics is the world’s largest continuous source of semiconductors–100% Authorized by over 70 leading semiconductor manufacturers. Rochester's comprehensive semiconductor lifecycle solutions include authorized distribution, licensed manufacturing, and manufacturing services. Brochure

  • ECCN/UNSPSC
  • Environmental & Export Classifications
Description Value
USHTS: 8541290095
CNHTS: 8541290000
MXHTS: 85412999
TARIC: 8541290000
ECCN: EAR99
Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Documents Media

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