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Home  Transistors - IGBTs - Single  IRG4PC50WPBF Datasheets | Transistors - IGBTs - Single IGBT, 55A I(C), 600V V(BR)CES, N

Sep 8 2020

IRG4PC50WPBF Datasheets | Transistors - IGBTs - Single IGBT, 55A I(C), 600V V(BR)CES, N

Product Overview

Image:
IRG4PC50WPBF
Manufacturer Part#: IRG4PC50WPBF
Product Category: Transistors - IGBTs - Single
Stock: No
Manufacturer: Rochester Electronics, LLC
Description: IGBT, 55A I(C), 600V V(BR)CES, N
Datasheet: N/A
Package: 1
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

IRG4PC50WPBF Images are for reference only.

IRG4PC50WPBF

CAD Models

Product Attributes

Manufacturer: Rochester Electronics LLC
Series: *
Packaging: Bulk
Part Status: Active

Alternative Models

Part Compare Manufacturers Category Description
Mfr.Part#:IRG4PC50WPBF Compare: Current Part Manufacturers:Infineon Category:IGBTs Description: Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube
Mfr.Part#:IRG4PC50SPBF Compare: IRG4PC50WPBF VS IRG4PC50SPBF Manufacturers:Infineon Category:IGBTs Description: IGBT Single Transistor, 70A, 1.62V, 200W, 600V, TO-247AC, 3Pins
Mfr.Part#:IRG4PC40UDPBF Compare: IRG4PC50WPBF VS IRG4PC40UDPBF Manufacturers:Infineon Category:IGBTs Description: Trans IGBT Chip N-CH 600V 40A 160000mW 3Pin(3+Tab) TO-247AC Tube
Mfr.Part#:IRG4PC50UDPBF Compare: IRG4PC50WPBF VS IRG4PC50UDPBF Manufacturers:Infineon Category:IGBTs Description: Trans IGBT Chip N-CH 600V 55A 200000mW 3Pin(3+Tab) TO-247AC Tube

Descriptions

Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube:Chip One Stop Global
Transistor IGBT Chip N Channel 600 Volt 55 Amp 3-Pin 3+ Tab TO-247AA:Jameco
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 62 ns Power dissipation: 200 W:Distrelec
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50W; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:33ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V:element14 APAC

FEATURES

Features

• Designed expressly for Switch-Mode Power Supply and PFC
(power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Lead-Free

Benefits

• Lower switching losses allow more cost-effective operation
than power MOSFETs up to 150 kHz ("hard switched" mode)
• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier recombination make these
an excellent option for resonant mode switching as well (up to >300 kHz)

ECCN / UNSPSC

Description Value
USHTS: 8541290095
CNHTS: 8541210000
MXHTS: 85412999
TARIC: 8541290000
ECCN: EAR99

Environmental & Export Classifications

Description Value
RoHS Status: Not applicable
Moisture Sensitivity Level (MSL): 3 (168 Hours)

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
IRG4PC50WPBF IRG4PC50WPBF Rochester Electronics, LLC IGBT, 55A I(C), 600V V(BR)CES, N   1,028 N/A
IRG4PC50WPBF IRG4PC50WPBF Infineon Technologies IGBT Transistors 600V Warp 60-150kHz   On Order

1:$6.09

10:$5.25

100:$4.35

250:$4.09

500:$3.84

1,000:$3.50

2,500:$3.40

IRG4PC50WPBF IRG4PC50WPBF Infineon Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube:Chip One Stop Global
Transistor IGBT Chip N Channel 600 Volt 55 Amp 3-Pin 3+ Tab TO-247AA:Jameco
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 62 ns Power dissipation: 200 W:Distrelec
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50W; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:33ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V:element14 APAC
 
On Order

1:$3.993

IRG4PC50WPBF IRG4PC50WPBF Infineon Technologies AG Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3   On Order

$3.9414 / $7.1066

Popularity by Region

  • 1. Taiwan
    100
  • 2. Poland
    99
  • 2. Poland
    99
  • 3. Chile
    96
  • 3. Chile
    96
  • 4. Mexico
    95
  • 5. Germany
    94
  • 6. Finland
    94
  • 7. China
    89
  • 8. Hungary
    89
  • 9. Cyprus
    88
  • 10. Vietnam
    87
  • 11. Austria
    86
  • 12. United States
    85
  • 13. Haiti
    83
  • 14. Colombia
    81
  • 15. Czech Republic
    81
  • 16. Albania
    80
  • 17. Malta
    80
  • 18. El Salvador
    80
  • 19. Canada
    79
  • 20. France
    78
  • 21. Pakistan
    78
  • 22. Palestinian Territory
    77
  • 22. Palestinian Territory
    77
  • 23. Indonesia
    77
  • 23. Indonesia
    77
  • 24. Morocco
    77
  • 24. Morocco
    77
  • 25. Brazil
    77
  • 25. Brazil
    77
  • 26. Russia
    77
  • 26. Russia
    77
  • 27. India
    76
  • 27. India
    76
  • 28. Latvia
    76
  • 28. Latvia
    76
  • 29. United Kingdom
    75
  • 30. Slovenia
    75
  • 31. Switzerland
    75
  • 32. Argentina
    75
  • 33. Ethiopia
    75
  • 34. Norway
    74
  • 35. Slovakia
    74
  • 36. Italy
    74
  • 37. Sweden
    74
  • 38. Belarus
    73
  • 39. Egypt
    73
  • 40. Bosnia and Herzegovina
    73
  • 41. Croatia
    73
  • 42. Japan
    73
  • 43. Tunisia
    73
  • 43. Tunisia
    73
  • 44. Uzbekistan
    73
  • 44. Uzbekistan
    73
  • 45. Saudi Arabia
    73
  • 45. Saudi Arabia
    73
  • 46. Myanmar
    72
  • 46. Myanmar
    72
  • 47. Cameroon
    72
  • 47. Cameroon
    72
  • 48. Algeria
    72
  • 48. Algeria
    72
  • 49. Romania
    72
  • 49. Romania
    72
  • 50. Belgium
    72
  • 50. Belgium
    72
  • 51. Australia
    72
  • 51. Australia
    72
  • 52. Kenya
    72
  • 52. Kenya
    72
  • 53. Ukraine
    71
  • 53. Ukraine
    71
  • 54. Netherlands
    71
  • 54. Netherlands
    71
  • 55. Qatar
    71
  • 55. Qatar
    71
  • 56. Thailand
    71
  • 56. Thailand
    71
  • 57. Lithuania
    70
  • 57. Lithuania
    70
  • 58. Iceland
    70
  • 59. Turkey
    70
  • 60. Malaysia
    70
  • 61. Hong Kong
    70
  • 61. Hong Kong
    70
  • 62. Bulgaria
    70
  • 62. Bulgaria
    70
  • 63. Democratic Republic of the Congo
    70
  • 63. Democratic Republic of the Congo
    70
  • 64. Sri Lanka
    70
  • 64. Sri Lanka
    70
  • 65. Tanzania
    70
  • 66. Ireland
    70
  • 67. Denmark
    69
  • 68. Greece
    69
  • 69. Israel
    69
  • 70. Nigeria
    69
  • 71. Serbia
    69
  • 72. Gabon
    69
  • 73. Ghana
    69
  • 74. Spain
    69
  • 75. Guatemala
    69
  • 76. Ecuador
    68
  • 77. Peru
    67
  • 78. South Korea
    67
  • 79. Portugal
    67
  • 80. Bangladesh
    67
  • 81. Jamaica
    67
  • 82. Philippines
    67
  • 82. Philippines
    67
  • 83. Azerbaijan
    66
  • 84. Dominican Republic
    66
  • 85. Guadeloupe
    66
  • 86. Venezuela
    66
  • 86. Venezuela
    66
  • 87. Armenia
    66
  • 87. Armenia
    66
  • 88. Singapore
    65
  • 88. Singapore
    65
  • 89. Guinea
    65
  • 89. Guinea
    65
  • 90. Costa Rica
    65
  • 90. Costa Rica
    65
  • 91. Luxembourg
    64
  • 92. Uganda
    64
  • 93. United Arab Emirates
    64
  • 94. Jordan
    63
  • 95. Yemen
    63
  • 95. Yemen
    63
  • 96. Saint Lucia
    63
  • 96. Saint Lucia
    63
  • 97. Moldova
    62
  • 97. Moldova
    62
  • 98. New Zealand
    58
  • 99. Estonia
    57
  • 100. Montenegro
    56
  • 101. Kazakhstan
    55
  • 102. Guyana
    42

IRG4PC50WPBF Popularity by Region

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models
Manufacturer: Rochester Electronics LLC
Series: *
Packaging: Bulk
Part Status: Active

Trans IGBT Chip N-CH 600V 55A 200000mW 3-Pin(3+Tab) TO-247AC Tube:Chip One Stop Global
Transistor IGBT Chip N Channel 600 Volt 55 Amp 3-Pin 3+ Tab TO-247AA:Jameco
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.3 V Current release time: 62 ns Power dissipation: 200 W:Distrelec
IGBT, 600V, 55A, TO-247AC; Transistor Type:IGBT; DC Collector Current:55A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:55A; Current Temperature:25°C; Device Marking:IRG4PC50W; Fall Time Max:120ns; Fall Time tf:120ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:220A; Rise Time:33ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V:element14 APAC

FEATURES

Features

• Designed expressly for Switch-Mode Power Supply and PFC
(power factor correction) applications
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Lead-Free

Benefits

• Lower switching losses allow more cost-effective operation
than power MOSFETs up to 150 kHz ("hard switched" mode)
• Of particular benefit to single-ended converters and boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier recombination make these
an excellent option for resonant mode switching as well (up to >300 kHz)

There is no relevant information available for this part yet.