BC847C Datasheets | Bipolar (BJT) - Single Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 250mW Surface Mount SOT-23-3 (TO-236)
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BC847C, BC847C Datasheet,BC847C PDF,Rochester Electronics, LLC
Descriptions
Transistor NPN BC847C
NXP Semiconductors RoHS milliampere=200 V=45 SOt23:Halfin
Trans GP BJT NPN 45V 0.1A Automotive 3-Pin TO-236AB:Chip One Stop Global
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Continuous Collector Current, Ic:100mA; Collector Emitter Saturation Voltage, Vce(sat):200mV; Power Dissipation, Pd:250mW ;RoHS Compliant: Yes:Newark
TRANSISTOR, NPN, SOT-23; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:45V; Current Ic Continuous a Max:100mA; Voltage, Vce Sat Max:200mV; Power Dissipation:250mW; Min Hfe:420; ft, Typ:100MHz; Case Style:SOT-23; Termination Type:SMD; Operating Temperature Range:-65°C to +150°C; Current Ic Max:200mA; Current Ic hFE:2mA; Device Marking:BC847C; Max Noise Factor:10dB; No. of Pins:3; Power, Ptot:250mW; SMD Marking:1G; Transistors, No. of:1; Voltage, Vcbo:50V; ft, Min:100MHz:Farnell