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Home  Transistors - FETs, MOSFETs - Single  2SK3899(0)-ZK-E1-AZ Datasheets| Renesas Electronics America Inc | PDF| Price| In Stock

Jan 5 2021

2SK3899(0)-ZK-E1-AZ Datasheets| Renesas Electronics America Inc | PDF| Price| In Stock

Product Overview

Image:
2SK3899-0-ZK-E1-AZ
Manufacturer Part#: 2SK3899(0)-ZK-E1-AZ
Product Category: Transistors - FETs, MOSFETs - Single
Stock: No
Manufacturer: Renesas Electronics America Inc
Description:
Datasheet: 2SK3899
Package: N/A
Minimum: 1
Lead Time: 3(168 Hours)
Quantity: On Order
Send RFQ: Inquiry

CAD Models

Product Attributes

Descriptions

There is no relevant information available for this part yet.

FEATURES

DESCRIPTION

The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

•Super low on-state resistance
RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A)
RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A)
•Low C iss: C iss= 5500 pF TYP.
•Built-in gate protection diode

Environmental & Export Classifications

Description Value
RoHS Status: ROHS3 Compliant
Moisture Sensitivity Level (MSL): Vendor Undefined
ECCN: EAR99
HTSUS: 8541.29.0095

Documents & Media

Datasheets: 2SK3899
PCN Obsolescence/ EOL: Mult Devices EOL 15/Jun/2018

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2SK3899-0-ZK-E1-AZ 2SK3899(0)-ZK-E1-AZ Renesas Electronics America Inc N/A On Order

N/A

2SK3899-0-ZK-E1-AZ 2SK3899(0)-ZK-E1-AZ Renesas N/A On Order

N/A

2SK3899-0-ZK-E1-AZ 2SK3899(0)-ZK-E1-AZ Renesas Electronics Corporation Nch Single Power MOSFET 60V 84A 5.3mohm MP-25ZK/TO-263 On Order

N/A

Popularity by Region

  • 1. India
    100
  • 2. China
    98
  • 3. Serbia
    98
  • 4. South Korea
    97
  • 5. United States
    96

2SK3899(0)-ZK-E1-AZ Popularity by Region

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models

There is no relevant information available for this part yet.

FEATURES

DESCRIPTION

The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES

•Super low on-state resistance
RDS(on)1= 5.3 mΩMAX. (VGS= 10 V, ID= 42 A)
RDS(on)2= 6.5 mΩMAX. (VGS= 4.5 V, ID= 42 A)
•Low C iss: C iss= 5500 pF TYP.
•Built-in gate protection diode

There is no relevant information available for this part yet.