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Jan 5 2021

2SC3357-T1-A Datasheets | Transistors - Bipolar (BJT) - RF RF Transistor

Product Overview

Image:
2SC3357-T1-A
Manufacturer Part#: 2SC3357-T1-A
Product Category: Transistors - Bipolar (BJT) - RF
Stock: No
Manufacturer: Renesas Electronics America Inc
Description: RF Transistor
Datasheet: NE85634, 2SC3357
Package: N/A
Minimum: 1
Lead Time: 1 Weeks
Quantity: On Order
Send RFQ: Inquiry

Reference Price

Qty Unit Price Ext. Price
1173: 0.21330 250.20090

2SC3357-T1-A Images are for reference only.

2SC3357-T1-A

CAD Models

Product Attributes

Descriptions

Transistor RF BJT NPN 20V 100mA 3-Pin Through Hole T/R:Avnet
Trans RF BJT NPN 12V 0.1A 4-Pin(3+Tab) Power Mini-Mold T/R:Verical

FEATURES

FEATURES

• Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
• High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
• Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package

Environmental & Export Classifications

Description Value
RoHS Status: Not applicable
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99

Documents & Media

Datasheets: NE85634, 2SC3357
Featured Product: High Performance Silicon RF Transistors
PCN Obsolescence/ EOL: EOL 12/Aug/2016
HTML Datasheet: EOL Revision 10/Nov/2016

Distributors

Image PartNo Manufacturer Descriptions Stock Step Price
2SC3357-T1-A 2SC3357-T1-A Renesas Electronics America Inc RF Transistor On Order

1,173:$$0.21330

2SC3357-T1-A 2SC3357-T1-A Renesas Transistor RF BJT NPN 20V 100mA 3-Pin Through Hole T/R:Avnet
Trans RF BJT NPN 12V 0.1A 4-Pin(3+Tab) Power Mini-Mold T/R:Verical
On Order

1:$0.198

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  • Product Attributes
  • Descriptions
  • Features
  • CAD Models

Transistor RF BJT NPN 20V 100mA 3-Pin Through Hole T/R:Avnet
Trans RF BJT NPN 12V 0.1A 4-Pin(3+Tab) Power Mini-Mold T/R:Verical

FEATURES

FEATURES

• Low noise and high gain
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz
• High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz
• Large Ptot : Ptot = 1.2 W (Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate)
• Small package : 3-pin power minimold package

There is no relevant information available for this part yet.